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RB153

Description
1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size259KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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RB153 Overview

1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

RB151 THRU RB157
SILICON BRIDGE RECTIFIERS
Reverse Voltage -
50 to 1000 Volts
RB-15
0.366(9.3)
0.350(8.9)
0.150(3.8)
0.130(3.3)
Forward Current -
1.5 Amperes
FEATURES
1.1
(27.9)
MIN.
1.0
(25.4)
MIN.
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
POS.LEAD
0.032(0.8)
DIA.
0.028(0.7)
MECHANICAL DATA
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Mounting Position:
Any
Weight:0.04
ounce, 1.15 grams
0.220(5.6)
0.180(4.6)
0.220(5.6)
0.180(4.6)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load, for capacitive load current derate by 20%.
SYMBOLS
RB
151
50
35
50
RB
152
100
70
100
RB
153
200
140
200
RB
154
400
280
400
1.5
50.0
10
1.0
10
0.5
15
40
-55 to +125
-55 to +150
RB
155
600
420
600
RB
156
800
560
800
RB
157
1000
700
1000
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
A
2
s
Volts
u
A
mA
pF
C/W
C
C
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current
at T
A
=25 C (Note 2)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
Maximum instantaneous forward voltage drop
per birdge element at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
2
t
V
F
I
R
C
J
R
q
JA
T
J
T
STG
NOTES:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2.Unit mounted on P.C. board with 0.22” x 0.22”(5.5x5.5mm) copper pads,0.375”(9.5mm) lead length.
www.shunyegroup.com

RB153 Related Products

RB153 RB151 RB154 RB152 RB155 RB156 RB157
Description 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, SILICON, BRIDGE RECTIFIER DIODE
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