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SB180S

Description
1 A, 80 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size282KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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SB180S Overview

1 A, 80 V, SILICON, SIGNAL DIODE

SB120S THRU SB1B0S
Reverse Voltage - 20 to 100 Volts
A-405
SCHOTTKY BARRIER RECTIFIER
FEATURES
Forward Current - 1.0 Ampere
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.1)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.025 (0.65)
0.021 (0.55)
DIA.
MECHANICAL DATA
Case:
JEDEC A-401 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.008
ounce, 0.23 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SB
SB
SB SB SB SB SB SB SB
120S 130S 140S 150S 160S 170S 180S 190S 1B0S
UNITS
VOLTS
VOLTS
VOLTS
Amp
Amps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
1.0
40.0
70
49
70
80
56
80
90
63
90
100
70
100
0.55
10.0
110
0.70
0.5
5.0
80
50.0
0.85
Volts
mA
pF
C/W
C
C
-65 to +125
-65 to +150
-65 to +150
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com

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SB180S SB120S SB140S SB130S SB170S SB150S SB160S SB190S SB1B0S
Description 1 A, 80 V, SILICON, SIGNAL DIODE 1 A, 20 V, SILICON, SIGNAL DIODE 1 A, 40 V, SILICON, SIGNAL DIODE 1 A, 30 V, SILICON, SIGNAL DIODE 1.0 Amp Schottky Barrier Rectifiers Voltage Range 70 to 100 volts Forward Current 1.0 Ampere 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 60 V, SILICON, SIGNAL DIODE 1.0 Amp Schottky Barrier Rectifiers Voltage Range 70 to 100 volts Forward Current 1.0 Ampere 1.0 Amp Schottky Barrier Rectifiers Voltage Range 70 to 100 volts Forward Current 1.0 Ampere

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