DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBZ5226B to PMBZ5257B
Voltage regulator diodes
Product specification
Supersedes data of 1999 May 17
2001 Feb 09
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 250 mW
•
Tolerance series:
±5%
•
Working voltage range:
nom. 3.3 to 33 V
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
General regulation functions.
handbook, halfpage
2
PMBZ5226B to PMBZ5257B
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
1
2
n.c.
1
3
DESCRIPTION
Low-power voltage regulator diodes
in small SOT23 plastic SMD
packages.
The series consists of 32 types with
nominal working voltages from
3.3 to 33 V.
MARKING
TYPE
NUMBER
PMBZ5226B
PMBZ5227B
PMBZ5228B
PMBZ5229B
PMBZ5230B
PMBZ5231B
PMBZ5232B
PMBZ5233B
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING
CODE
(1)
∗8A
∗8B
∗8C
∗8D
∗8E
∗8F
∗8G
∗8H
TYPE
NUMBER
PMBZ5234B
PMBZ5235B
PMBZ5236B
PMBZ5237B
PMBZ5238B
PMBZ5239B
PMBZ5240B
PMBZ5241B
MARKING
CODE
(1)
∗8J
∗8K
∗8L
∗8M
∗8N
∗8P
∗8Q
∗8R
TYPE
NUMBER
PMBZ5242B
PMBZ5243B
PMBZ5244B
PMBZ5245B
PMBZ5246B
PMBZ5247B
PMBZ5248B
PMBZ5249B
MARKING
CODE
(1)
∗8S
∗8T
∗8U
∗8V
∗8W
∗8X
∗8Y
∗8Z
TYPE
NUMBER
PMBZ5250B
PMBZ5251B
PMBZ5252B
PMBZ5253B
PMBZ5254B
PMBZ5255B
PMBZ5256B
PMBZ5257B
MARKING
CODE
81A
81B
81C
81D
81E
81F
81G
81H
3
Top view
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
2001 Feb 09
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Notes
1. Device mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
2. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
PMBZ5226B to PMBZ5257B
CONDITIONS
−
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
T
amb
= 25
°C;
note 2
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.2
MIN.
see Table
“Per type”
−
−
−
−65
−
MAX.
200
UNIT
mA
300
250
40
+150
150
mW
mW
W
°C
°C
CONDITIONS
I
F
= 200 mA; see Fig.3
MAX.
1.1
UNIT
V
2001 Feb 09
3
Per type
T
j
= 25
°C
unless otherwise specified.
TEST
WORKING DIFFERENTIAL TEMP. COEFF.
S
Z
(%/K)
CURRENT
VOLTAGE RESISTANCE
(1)
(2)
r
dif
(Ω)
at I
Z
I
Ztest
(mA)
V
Z
(V)
at I
Ztest
at I
Z
= 0.25 mA
NOM.
PMBZ5226B
PMBZ5227B
PMBZ5228B
PMBZ5229B
PMBZ5230B
PMBZ5231B
PMBZ5232B
PMBZ5233B
PMBZ5234B
PMBZ5235B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
MAX.
1600
1700
1900
2000
2000
2000
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
TYP.
−0.064
−0.065
−0.063
−0.058
−0.047
−0.013
+0.023
+0.023
+0.039
+0.040
+0.047
+0.052
+0.053
+0.055
+0.055
+0.058
+0.062
+0.065
+0.067
+0.073
+0.073
+0.073
+0.078
+0.078
+0.080
+0.080
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
MAX.
450
450
450
450
450
300
300
300
200
200
150
150
150
150
90
85
85
80
80
75
75
75
70
70
60
60
REVERSE CURRENT at
REVERSE VOLTAGE
I
R
(µA)
MAX.
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1.0
1.0
1.0
1.0
1.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
17
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.5
3.0
2001 Feb 09
4
Philips Semiconductors
Voltage regulator diodes
TYPE No.
PMBZ5236B
PMBZ5237B
PMBZ5238B
PMBZ5239B
PMBZ5240B
PMBZ5241B
PMBZ5242B
PMBZ5243B
PMBZ5244B
PMBZ5245B
PMBZ5246B
PMBZ5247B
PMBZ5248B
PMBZ5249B
PMBZ5250B
PMBZ5251B
PMBZ5226B to PMBZ5257B
3.0
2.5
2.5
2.5
2.0
2.0
1.5
1.5
1.5
1.5
1.5
1.25
Product specification
2001 Feb 09
5
Philips Semiconductors
TYPE No.
TEST
WORKING DIFFERENTIAL TEMP. COEFF.
S
Z
(%/K)
CURRENT
VOLTAGE RESISTANCE
(2)
(1)
at I
Z
r
dif
(Ω)
I
Ztest
(mA)
V
Z
(V)
at I
Z
= 0.25 mA
at I
Ztest
NOM.
MAX.
600
600
600
600
600
700
TYP.
+0.081
+0.082
+0.085
+0.085
+0.085
+0.085
5.2
5.0
4.6
4.5
4.2
3.8
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
MAX.
55
55
50
50
50
45
REVERSE CURRENT at
REVERSE VOLTAGE
I
R
(µA)
MAX.
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
18
19
21
21
23
25
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
1.25
1.25
1.0
1.0
1.0
0.9
Voltage regulator diodes
PMBZ5252B
PMBZ5253B
PMBZ5254B
PMBZ5255B
PMBZ5256B
PMBZ5257B
Notes
24
25
27
28
30
33
1. V
Z
is measured with device at thermal equilibrium while mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
2. For types PMBZ5226B to PMBZ5242B the I
Z
current is 7.5 mA; for PMBZ5243B and higher I
Z
= I
Ztest
. S
Z
values valid between 25
°C
and 125
°C.
PMBZ5226B to PMBZ5257B
Product specification
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