P4KA6.8 thru P4KA43A
Vishay General Semiconductor
Automotive Transient Voltage Suppressors
High Temperature Stability & High Reliability Conditions
FEATURES
• Patented PAR
®
construction
• Available in Unidirectional polarity only
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Typical I
D
less than 1.0 µA above 10 V rating
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive, and
telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over passivated
junction
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
HE3 suffix for high reliability grade (AEC Q101
qualified)
Polarity:
Color band denotes cathode end
*
nted
e
Pat
* Patent#'s
4,980,315
5,166,769
5,278,094
DO-204AL (DO-41)
MAJOR RATINGS AND CHARACTERISTICS
V
(BR)
P
PPM
P
D
I
FSM
T
j
max.
6.8 V to 43 V
400 W
1.0 W
40 A
185 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
(Fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave
(2)
Maximum instantaneous forward voltage at 25 A
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) All terms and symbols are consistent with ANSI/IEEE C62.35
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
Minimum 400
see next table
1.0
40
3.5
- 65 to + 185
UNIT
W
A
W
A
V
°C
Document Number 88364
20-Jun-06
www.vishay.com
1
P4KA6.8 thru P4KA43A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
DEVICE TYPE
V
(BR) (1)
AT I
T
(V)
MIN
P4KA6.8
P4KA6.8A
P4KA7.5
P4KA7.5A
P4KA8.2
P4KA8.2A
P4KA9.1
P4KA9.1A
P4KA10
P4KA10A
P4KA11
P4KA11A
P4KA12
P4KA12A
P4KA13
P4KA13A
P4KA15
P4KA15A
P4KA16
P4KA16A
P4KA18
P4KA18A
P4KA20
P4KA20A
P4KA22
P4KA22A
P4KA24
P4KA24A
P4KA27
P4KA27A
P4KA30
P4KA30A
P4KA33
P4KA33A
P4KA36
P4KA36A
P4KA39
P4KA39A
P4KA43
P4KA43A
Note:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
MAX
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
TEST
CURRENT
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
STAND-
REVERSE
OFF
LEAKAGE
VOLTAGE
AT V
WM
V
WM
I
D
(V)
(µA)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.0
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
300
300
150
150
50
50
10
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
T
J
= 150 °C
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
1000
1000
500
500
200
200
50
50
20
20
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
MAXIMUM.
PEAK PULSE
SURGE
CURRENT
I
PPM (2)
(A)
37.0
38.1
34.2
35.4
32.0
33.1
29.0
29.9
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.2
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
MAXIMUM
TEMP.
COEFFICIENT
OF V
(BR)
(%/°C)
0.057
0.057
0.060
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
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Document Number 88364
20-Jun-06
P4KA6.8 thru P4KA43A
Vishay General Semiconductor
ORDERING INFORMATION
PREFERRED P/N
P4KA6.8AHE3/54
UNIT WEIGHT (g)
0.336
PREFERRED PACKAGE CODE
54
BASE QUANTITY
4000
DELIVERY MODE
13" Diameter Paper Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
150
Non-repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
T
J
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50
%
of I
PPM
I
PPM
- Peak Pulse Current,
%
I
RSM
tr = 10
µsec
Peak
Value
I
PPM
P
PPM
- Peak Pulse Power (kW)
10
100
Half
V
alue — IPP
2
I
PPM
50
10/1000
µsec Waveform
as defined
by
R.E.A.
1
td
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
0
0
1.0
2.0
3.0
4.0
td - Pulse
Width
(s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
20000
C
J
- Junction Capacitance (pF)
10000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Measured at
Zero Bias
75
50
1000
Measured at
Stand-Off
Voltage, V
WM
25
0
0
25
50
75
100
125
150
175
200
100
1.0
10
100
200
T
J
- Initial Temperature (°C)
V
(BR)
- Breakdown
Voltage
(V)
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
Figure 4. Typical Junction Capacitance
Document Number 88364
20-Jun-06
www.vishay.com
3
P4KA6.8 thru P4KA43A
Vishay General Semiconductor
I
FSM
- Peak Forward Surge Current (A)
1.00
60 Hz
Resistive or
Inductive Load
0.75
200
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
P
D
, Power Dissipation (W)
0.50
L = 0.375" (9.5 mm)
Lead Lengths
50
0.25
0
0
25
50
75
100
125
150
175
200
10
1
5
10
50
100
T
L
- Lead Temperature (°C)
Number
of Cycles at 60 Hz
Figure 5. Power Derating Curve
Figure 6. Maximum Non-Repetitive/Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Available in uni-directional only
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Document Number 88364
20-Jun-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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