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P4KE150A

Description
Trans Voltage Suppressor Diode, 400W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size645KB,6 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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P4KE150A Overview

Trans Voltage Suppressor Diode, 400W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2

P4KE150A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codecompliant
Other featuresUL RECOGNIZED
Maximum breakdown voltage158 V
Minimum breakdown voltage143 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage128 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
P4KE SERIES
Technical Data
Data Sheet N0220, Rev. B
P4KE SERIES
TRANSIENT VOLTAGE SUPPRESSOR
Features
Glass Passivated Die Construction
400W Peak Pulse Power Dissipation
6.8V- 440V Standoff Voltage
Uni- and Bi-Directional Versions Available
Excellent Clamping Capability
Fast Response Time
Plastic Case Material has UL Flammability Classification
Rating 94V-O
This is a Pb − Free Device
All SMC Parts are Traceable to the Wafer Lot
Additional testing can be offered upon request
DO-41
Circuit Diagram
Mechanical Data
Case: JEDEC DO-41 Low Profile Molded Plastic
Terminals: Solder Plated , Solderable per MIL-STD-
202, Method 208
Polarity: Cathode Band or Cathode Notch
Weight:0.34 grams(approx.)
Maximum Ratings and Thermal Characteristics
@T
A
=25°C unless otherwise specified
Parameter
Peak Pulse Power Dissipation at
T
A
=25°C
(Fig.1)(Note 1, 2, 5)
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave Fig.6 (Note 3)
Peak Pulse Current on 10x1000μs
Waveform(Fig.3)(Note 1)
Steady State Power Dissipation( Note 2, 4)
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient
Operating Junction and Storage
Temperature Range
Symbol
P
PPM
I
FSM
I
PPM
P
M(AV)
R
θJL
R
θJA
T
J
,T
STG
Value
400
40
See Table 1
1
60
100
-65 to + 175
Unit
W
A
A
W
°C/W
°C/W
°C
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2.
2. Mounted on 40mm² copper pad.
3. 8.3ms Single Half Sine Wave duty cycle = 4 pulses per minutes maximum
4. Lead temperature at 75°C= T
L
3. Peak pulse power waveform is 10/1000
μs
.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

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