HMC478SC70
/
478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Features
P1dB Output Power: +17 dBm
Gain: 23 dB
Output IP3: +31 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SC70 Package
8
Amplifiers - Driver & GAin Block - smT
Typical Applications
The HMC478SC70(E) is an ideal for:
• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC478SC70(E) is a SiGe Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering DC to 4 GHz. This industry
standard SC70 packaged amplifier can be used as
a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +17 dBm output power.
The HMC478SC70(E) offers 23 dB of gain with a
+31 dBm output IP3 at 850 MHz while requiring only
62 mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
Electrical Specifications,
Vs= 5V, Rbias= 18 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 4 GHz
DC - 3.0 GHz
3.0 - 4.0 GHz
DC - 3.0 GHz
3.0 - 4.0 GHz
DC - 4 GHz
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 3.0 GHz
3.0 - 4.0 GHz
13
11
9
Min.
20
16
13
11
Typ.
24
20
17
15
0.015
15
17
15
13
20
16
15
12
31
28
25
2.5
2.8
62
82
0.02
Max.
Units
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC478SC70
/
478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Gain vs. Temperature
30
25
20
Broadband Gain & Return Loss
30
20
RESPONSE (dB)
10
0
-10
-20
-30
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
S21
S11
S22
8
Amplifiers - Driver & GAin Block - smT
8-2
GAIN (dB)
15
10
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
1
2
3
4
5
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
S21
S11
S22
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-5
-10
-15
-20
-25
-30
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
Noise Figure vs. Temperature
10
8
NOISE FIGURE (dB)
+25C
+85C
-40C
6
4
2
0
0
1
2
3
4
5
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC478SC70
/
478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Psat vs. Temperature
24
20
16
12
8
4
0
+25C
+85C
-40C
8
Amplifiers - Driver & GAin Block - smT
P1dB vs. Temperature
24
20
16
12
8
4
0
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
P1dB (dBm)
Psat (dBm)
0
1
2
3
4
5
FREQUENCY (GHz)
Output IP3 vs. Temperature
35
Gain, Power & Output IP3 vs. Supply
Voltage for Rs = 18 Ohms @ 850 MHz
34
32
30
28
26
24
22
20
18
16
14
12
10
8
4.75
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
30
IP3 (dBm)
25
+25C
+85C
-40C
20
15
Gain
P1dB
Psat
IP3
10
0
1
2
3
4
5
FREQUENCY (GHz)
5
Vs (Vdc)
5.25
Icc vs. Vcc Over Temperature for
Fixed Vs= 5V,
R
bias
= 18 Ohms
80
75
70
Icc (mA)
65
60
55
50
45
40
3.60
-40C
+25C
+85C
3.70
3.80
3.90
Vcc (V)
4.00
4.10
4.20
8-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC478SC70
/
478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +2.4 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+6 Vdc
100 mA
+5 dBm
150 °C
0.583 W
111.5 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
Amplifiers - Driver & GAin Block - smT
8-4
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
HMC478SC70
HMC478SC70E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
478
478E
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC478SC70
/
478SC70E
v01.0811
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
8
Amplifiers - Driver & GAin Block - smT
Pin Descriptions
Pin Number
1, 2, 4, 5
Function
GND
Description
These pins must be connected to RF/DC ground.
Interface Schematic
3
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
6
RFOUT
RF output and DC Bias (Vcc) for the output stage.
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
R
bias
V
alue
R
bias
P
ower
r
ating
5V
18 Ω
1/8 W
6V
35 Ω
1/4 W
8V
67 Ω
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
bias
provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
Frequency (MHz)
50
270 nH
0.01 µF
900
56 nH
100 pF
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
8-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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