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UF5407

Description
3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size230KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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UF5407 Overview

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD

UF5400 THRU UF5408
ULTRA FAST RECTIFIERS
Reverse Voltage -
50 to 1000 Volts
DO-201AD
Forward Current -
3.0 Amperes
FEATURES
1.0 (25.4)
MIN.
0.220(5.6)
0.197(5.0)
DIA.
0.375(9.5)
0.285(7.2)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ultra fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.052(1.3)
0.048(1.2)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
UF
UF
UF
UF
UF UF
UF
UF UF
5400 5401 5402 5403 5404 5405 5406 5407 5408
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100 200 300 400 500
70 140 210 280 350
100 200 300 400 500
3.0
600 800 1000 VOLTS
420 560 700 VOLTS
600 800 1000 VOLTS
Amps
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
50
1.0
150.0
1.70
5.0
150.0
75
45
20.0
-65 to +150
Amps
Volts
u
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com

UF5407 Related Products

UF5407 UF5400 UF5403 UF5402 UF5405 UF5406 UF5401 UF5404 UF5408
Description 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD

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