BTW48-200M datasheet, PDF - EEWORLD Datasheet

BTW48-200M: DescriptionSILICON CONTROLLED RECTIFIER,200V V(DRM),50A I(T),TO-208AA; CategoryAnalog mixed-signal IC Trigger device; File Size161KB，4 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BTW48-200M Overview

SILICON CONTROLLED RECTIFIER,200V V(DRM),50A I(T),TO-208AA

Parameter Name	Attribute value
Maker	STMicroelectronics
package instruction	,
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum DC gate trigger current	60 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	30 mA
Maximum leakage current	5 mA
On-state non-repetitive peak current	500 A
Maximum on-state current	50000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Off-state repetitive peak voltage	200 V
surface mount	NO
Trigger device type	SCR

	BTW48-200M	BTW48-400M	BTW48-600M	BTW48-800M	BTW48-1200M
Description	SILICON CONTROLLED RECTIFIER,200V V(DRM),50A I(T),TO-208AA	SILICON CONTROLLED RECTIFIER,400V V(DRM),50A I(T),TO-208AA	SILICON CONTROLLED RECTIFIER,600V V(DRM),50A I(T),TO-208AA	SILICON CONTROLLED RECTIFIER,800V V(DRM),50A I(T),TO-208AA	SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),50A I(T),TO-208AA
Maker	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum DC gate trigger current	60 mA	60 mA	60 mA	60 mA	60 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V	3 V	3 V
Maximum holding current	30 mA	30 mA	30 mA	30 mA	30 mA
Maximum leakage current	5 mA	5 mA	5 mA	5 mA	5 mA
On-state non-repetitive peak current	500 A	500 A	500 A	500 A	500 A
Maximum on-state current	50000 A	50000 A	50000 A	50000 A	50000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Off-state repetitive peak voltage	200 V	400 V	600 V	800 V	1200 V
surface mount	NO	NO	NO	NO	NO
Trigger device type	SCR	SCR	SCR	SCR	SCR
Nominal circuit commutation break time	-	50 µs	50 µs	50 µs	50 µs

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