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RG3D

Description
Diode Switching 200V 3A 2-Pin Case G-3
CategoryDiscrete semiconductor    diode   
File Size59KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

RG3D Overview

Diode Switching 200V 3A 2-Pin Case G-3

RG3D Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknown
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, LJnc,
RG3ATHRU RG3M
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage
- 50 to 1000 Volts
Forward Current
-3.0 Amperes
FEATURES
Case Stvle G3
» High temperature metallurgically bonded
construction
* Glass passivated cavity-free junction
* Hermetically sealed package
* 3.0 Ampere operation
at TA=55°C with
no thermal runaway
» Typical IR less than 0.1 uA
» Capable of meeting environmental standards of
MIL-S-19500
» Fast switching for high efficiency
» High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 Ibs. (2.3kg) tension
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case:Solid glass body
Terminals:
Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position: Any
Weight:
0.04 ounce, 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
RG3A
RG3B
RG3D
RG3G
RG3J
RG3K
RG3M
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=55°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum average reverse current
at rated peak reverse voltage
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
TA=25°C
TA=100°C
VRRM
VRMS
VDC
I(AV)
50
35
50
100
70
100
220
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volts
^A
HA
IFSM
100.0
1.3
VF
|R(AV)
2.0
100.0
5.0
150
IR
trr
Cj
250
40.0
22.0
-65 to +175
400
500
ns
PF
R0JA
Tj, TSTG
°C/W
°c
NOTES:
(1) Reverse recovery test conditions: lp=0.5A, |R=1.0A, lr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, with both leads attached to heat sink
Quality Semi-Conductors

RG3D Related Products

RG3D RG3A RG3B RG3G RG3J
Description Diode Switching 200V 3A 2-Pin Case G-3 Diode Switching 50V 3A 2-Pin Case G-3 Diode Switching 100V 3A 2-Pin Case G-3 Diode Switching 400V 3A 2-Pin Case G-3 Diode Switching 600V 3A 2-Pin Case G-3
Maker New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor
Reach Compliance Code unknown unknown unknown unknown unknown
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