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BDW93A

Description
Power Bipolar Transistor, 12A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size364KB,4 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

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Power Bipolar Transistor, 12A I(C), NPN

BDW93A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codenot_compliant
Maximum collector current (IC)12 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)80 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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