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BDW93A

Description
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size43KB,1 Pages
ManufacturerCrimson Semiconductor Inc.
Download Datasheet Parametric View All

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BDW93A Overview

Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

BDW93A Parametric

Parameter NameAttribute value
MakerCrimson Semiconductor Inc.
package instructionTO-220, 3 PIN
Reach Compliance Codeunknown
Maximum collector current (IC)12 A
Collector-emitter maximum voltage60 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment80 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)2 MHz
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