Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| Parts packaging code | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 12 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | DARLINGTON |
| Minimum DC current gain (hFE) | 100 |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 80 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 20 MHz |
| BDW94B | BDW94 | BDW94C | |
|---|---|---|---|
| Description | Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 12A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG |
| Parts packaging code | SFM | SFM | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 12 A | 12 A | 12 A |
| Collector-emitter maximum voltage | 80 V | 45 V | 100 V |
| Configuration | DARLINGTON | DARLINGTON | DARLINGTON |
| Minimum DC current gain (hFE) | 100 | 100 | 100 |
| JEDEC-95 code | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 80 W | 80 W | 80 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 20 MHz | 20 MHz | 20 MHz |
| Is Samacsys | - | N | N |
| Base Number Matches | - | 1 | 1 |
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