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BDT60C

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size209KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BDT60C Overview

Transistor,

BDT60C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)4 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)50 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)10 MHz
This Material Copyrighted By Its Respective Manufacturer

BDT60C Related Products

BDT60C BDT60
Description Transistor, Transistor,
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknow
Maximum collector current (IC) 4 A 4 A
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 750 750
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 50 W 50 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 10 MHz 10 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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