S-LDTC143TET1G datasheet, PDF - EEWORLD Datasheet

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S-LDTC143TET1G: DescriptionSmall Signal Bipolar Transistor,; CategoryDiscrete semiconductor The transistor; File Size773KB，9 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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S-LDTC143TET1G Overview

Small Signal Bipolar Transistor,

S-LDTC143TET1G Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknown

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LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by integrating

them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SC-89 package

which is designed for low power surface mount applications.

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

The SC-89 package can be soldered using wave or reflow. The

modified gull-winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

• We declare that the material of product compliance with

RoHS requirements.

•

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

•

LDTC114EET1G Series

S-LDTC114EET1G Series

SC-89

PIN 1

BASE

(INPUT)

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

CBO

CEO

Value

100

Unit

Vdc

mAdc

THERMAL CHARACTERISTICS

Rating

Total Device Dissipation,

FR−4 Board (Note 1) @ T

= 25°C

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient (Note 1)

Total Device Dissipation,

FR−4 Board (Note 2) @ T

= 25°C

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient (Note 2)

Junction and Storage Temperature

Range

Symbol

200

1.6

qJA

300

2.4

qJA

, T

stg

400

−55 to +150

mW/°C

°C/W

°C

600

mW/°C

°C/W

Value

Unit

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0

1.0 Inch Pad

Rev.B 1/9

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