DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2101M05
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05)
FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-
gain amplification
P
O (1 dB)
= 21 dBm TYP. @ V
CE
= 3.6 V, I
Cq
= 10 mA, f = 2 GHz
NF = 0.6 dB TYP., G
a
= 19.0 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: V
CEO
(absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
ORDERING INFORMATION
Part Number
NESG2101M05
NESG2101M05-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
13.0
5.0
1.5
100
500
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 38
×
38 mm, t = 0.4 mm polyimide PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10190EJ02V0DS (2nd edition)
Date Published March 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 2002, 2003
NESG2101M05
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
Linear Gain
f
T
S
21e
2
NF
NF
G
a
G
a
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 15 mA
−
−
130
−
−
190
100
100
260
nA
nA
−
V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 7 mA, f = 1 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 7 mA, f = 1 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
V
CE
= 3.6 V, I
Cq
= 10 mA, f = 2 GHz
V
CE
= 3.6 V, I
Cq
= 10 mA, f = 2 GHz
14
11.5
−
−
11.0
−
−
14.5
−
−
17
13.5
0.9
0.6
13.0
19.0
0.4
17.0
21
15
−
−
1.2
−
−
−
0.5
−
−
−
GHz
dB
dB
dB
dB
dB
pF
dB
dBm
dB
MSG
Note 3
P
O (1 dB)
G
L
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
3.
MSG =
S
21
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
T1J
130 to 260
2
Data Sheet PU10190EJ02V0DS
NESG2101M05
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
700
600
500
400
300
200
100
0
25
50
Mounted on Polyimide PCB
(38
×
38 mm, t = 0.4 mm)
1.0
f = 1 MHz
0.8
0.6
0.4
0.2
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 1 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 2 V
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 3 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 4 V
Collector Current I
C
(mA)
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
Data Sheet PU10190EJ02V0DS
3
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