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NE3503M04-A

Description
NE3503M04-A
CategoryDiscrete semiconductor    The transistor   
File Size199KB,11 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance  
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NE3503M04-A

NE3503M04-A Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instructionSMALL OUTLINE, R-PDSO-F4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage3 V
Maximum drain current (Abs) (ID)0.07 A
Maximum drain current (ID)0.015 A
FET technologyHETERO-JUNCTION
highest frequency bandKU BAND
JESD-30 codeR-PDSO-F4
JESD-609 codee6
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.125 W
Minimum power gain (Gp)11 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

NE3503M04-A Related Products

NE3503M04-A NE3503M04-T2B-A NE3503M04-T2-A
Description NE3503M04-A NE3503M04-T2B-A NE3503M04-T2-A
Brand Name Renesas Renesas Renesas
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
package instruction SMALL OUTLINE, R-PDSO-F4 SMALL OUTLINE, R-PDSO-F4 SMALL OUTLINE, R-PDSO-F4
Contacts 4 4 4
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 3 V 3 V 3 V
Maximum drain current (Abs) (ID) 0.07 A 0.07 A 0.07 A
Maximum drain current (ID) 0.015 A 0.015 A 0.015 A
FET technology HETERO-JUNCTION HETERO-JUNCTION HETERO-JUNCTION
highest frequency band KU BAND KU BAND KU BAND
JESD-30 code R-PDSO-F4 R-PDSO-F4 R-PDSO-F4
Number of components 1 1 1
Number of terminals 4 4 4
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 0.125 W 0.125 W 0.125 W
Minimum power gain (Gp) 11 dB 11 dB 11 dB
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
JESD-609 code e6 - e6
Terminal surface TIN BISMUTH - TIN BISMUTH

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