DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
2PA1774M series
PNP general purpose transistor
Product data sheet
2004 Feb 19
NXP Semiconductors
Product data sheet
PNP general purpose transistor
FEATURES
•
Leadless ultra small plastic package
(1 mm
×
0.6 mm
×
0.5 mm)
•
Board space 1.3 mm
×
0.9 mm
•
Power dissipation comparable to SOT23.
APPLICATIONS
•
General purpose small signal DC
•
Low and medium frequency AC applications
•
Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
DESCRIPTION
PNP general purpose transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: 2PC4617M series.
MARKING
TYPE NUMBER
2PA1774QM
2PA1774RM
2PA1774SM
ORDERING INFORMATION
TYPE
NUMBER
2PA1774QM
2PA1774RM
2PA1774SM
−
−
−
PACKAGE
NAME
DESCRIPTION
MARKING CODE
PB
PA
PC
2PA1774M series
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
MAX.
−40
−100
−200
UNIT
V
mA
mA
handbook, halfpage
3
3
1
2
2
1
Bottom view
MAM469
Fig.1 Simplified outline (SOT883) and symbol.
VERSION
SOT883
leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
2004 Feb 19
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T
amb
≤
25
°C
note 1
note 2
T
stg
T
j
T
amb
Notes
storage temperature
junction temperature
operating ambient temperature
−
−
−65
−
−65
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
2PA1774M series
MIN.
MAX.
−50
−40
−5
−100
−200
−100
250
430
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
mW
°C
°C
°C
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
μm
copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 2
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
μm
copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
500
290
K/W
K/W
VALUE
UNIT
2004 Feb 19
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
2PA1774QM
2PA1774RM
2PA1774SM
V
CEsat
C
c
f
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector-emitter saturation voltage
collector capacitance
transition frequency
I
C
=
−50
mA; I
B
=
−5
mA; note 1
I
E
= i
e
= 0; V
CB
=
−12
V; f = 1 MHz
V
CE
=
−12
V; I
C
=
−2
mA;
f = 100 MHz
CONDITIONS
V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
E
= 0; T
j
= 150
°C
V
EB
=
−4
V; I
C
= 0
V
CE
=
−6
V; I
C
=
−1
mA
−
−
−
2PA1774M series
MIN.
MAX.
−100
−5
−100
270
390
560
−200
2.2
−
UNIT
nA
μA
nA
120
180
270
−
−
100
mV
pF
MHz
10
3
handbook, halfpage
(1)
MDB663
handbook, halfpage
−1200
MDB664
VBE
(mV)
−1000
hFE
(2)
(1)
(3)
−800
10
2
−600
(2)
−400
(3)
10
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
−200
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
V
CE
=
−6
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
=
−6
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.3
Fig.2 DC current gain; typical values.
Base-emitter voltage as a function of
collector current; typical values.
2004 Feb 19
4
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PA1774M series
handbook, halfpage
−10
3
MDB665
handbook, halfpage
−1200
MDB666
VBEsat
(mV)
VCEsat
(mV)
−1000
(1)
−800
−10
2
−600
(1)
(2)
(3)
(3)
(2)
−400
−10
−10
−1
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
−1
−10
−10
2
−10
3
IC (mA)
−200
−10
−1
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
−1
−10
2
IC (mA)
−10
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
handbook, halfpage
(1)
IC
(2)
(A)
(3)
−0.16
(4)
(5)
−0.2
MDB667
10
3
RCEsat
(Ω)
MDB668
(6)
(7)
10
2
−0.12
(8)
(9)
−0.08
10
(10)
(1)
(2)
−0.04
(3)
0
0
−2
−4
−6
−8
−10
VCE (V)
(9) I
B
=
−0.54
mA.
(10) I
B
=
−0.27
mA.
1
−10
−1
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
−1
−10
−10
2
−10
3
IC (mA)
(1)
(2)
(3)
(4)
I
B
=
−2.7
mA.
I
B
=
−2.43
mA.
I
B
=
−2.16
mA.
I
B
=
−1.89
mA.
(5) I
B
=
−1.62
mA.
(6) I
B
=
−1.35
mA.
(7) I
B
=
−1.08
mA.
(8) I
B
=
−0.81
mA.
Fig.7
Fig.6
Collector current as a function of
collector-emitter voltage; typical values.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2004 Feb 19
5
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