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2PB709AR

Description
PNP general purpose transistor
CategoryDiscrete semiconductor    The transistor   
File Size51KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

2PB709AR Overview

PNP general purpose transistor

2PB709AR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-based maximum capacity5 pF
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)210
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
VCEsat-Max0.5 V
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D114
2PB709A
PNP general purpose transistor
Product data sheet
Supersedes data of 1997 Jun 19
1999 Apr 23

2PB709AR Related Products

2PB709AR 2PB709A 2PB709AQ 2PB709AS
Description PNP general purpose transistor PNP general purpose transistor PNP general purpose transistor PNP general purpose transistor
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 PLASTIC, SC-59, 3 PIN PLASTIC, SC-59, 3 PIN
Reach Compliance Code unknow compli unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 5 pF 5 pF 5 pF 5 pF
Collector-emitter maximum voltage 45 V 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 210 160 160 290
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.25 W 0.2 W 0.2 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 70 MHz 80 MHz 60 MHz 80 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V 0.5 V
Is it Rohs certified? conform to - conform to conform to
Parts packaging code SOT-23 - SOT-23 SOT-23
Contacts 3 - 3 3
JEDEC-95 code TO-236 - TO-236 TO-236
JESD-609 code e3 - e3 e3
Peak Reflow Temperature (Celsius) 260 - NOT SPECIFIED 260
Terminal surface TIN - Matte Tin (Sn) Tin (Sn)
Maximum time at peak reflow temperature 40 - NOT SPECIFIED 40
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