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BDS16SMD-JQR-BR4

Description
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, CERAMIC, SMD1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size49KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric View All

BDS16SMD-JQR-BR4 Overview

Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, CERAMIC, SMD1, 3 PIN

BDS16SMD-JQR-BR4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionCERAMIC, SMD1, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-276AB
JESD-30 codeR-CBCC-N3
JESD-609 codee4
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
BDS16 BDS16SMD
BDS17 BDS17SMD
MECHANICAL DATA
Dimensions in mm
1 0.6
0.8
4.6
BDS16SMD05
BDS17SMD05
16.5
3.6
Dia.
1 3 .5
1 0 .6
SILICON NPN EPITAXIAL BASE
IN TO220 METAL AND
SMD CERAMIC SURFACE MOUNT
PACKAGES
FEATURES
HERMETIC METAL OR CERAMIC PACKAGES
HIGH RELIABILITY
MILITARY AND SPACE OPTIONS
SCREENING TO CECC LEVELS
FULLY ISOLATED (METAL VERSION)
1 23
1 3 .7 0
1.0
2 .5 4
BSC
2. 70
BSC
APPLICATIONS
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
7 .5 4 (0 .2 9 6 )
0 .7 6 (0 .0 3 0 )
TO220M
- TO220 Metal Package - Isolated
Pin 1
– Base
Pin 2
– Collector
Pin 3
– Emitter
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 2 )
M a x .
1
3
3 .0 5 (0 .1 2 0 )
m in .
2 .4 1 (0 .0 9 5 )
2 .4 1 (0 .0 9 5 )
0 .1 2 7 (0 .0 0 5 )
3 .1 7 5 (0 .1 2 5 )
M a x .
0 .7 6
(0 .0 3 0 )
m in .
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )

!
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
2
0 .7 6
(0 .0 3 0 )
m in .
5 .7 2 (.2 2 5 )
0 .1 2 7 (0 .0 0 5 )
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
1 6 P L C S
0 .5 0 (0 .0 2 0 )
7 .2 6 (0 .2 8 6 )
0 .1 2 7 (0 .0 0 5 )
1 0 .1 6 (0 .4 0 0 )
SMD1(TO276AB)-
Ceramic Surface Mount Package
Pad 1
– Base
Pad 2
– Collector
Pad 3
– Emitter
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
SMD05 (TO276AA)-
Ceramic Surface Mount Package
Pad 1
– Base
Pad 2
– Collector
Pad 3
– Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
E
, I
C
I
B
P
tot
T
stg
T
j
Collector - Base voltage (I
E
= 0)
Collector - Emitter voltage (I
B
= 0)
Emitter - Base voltage (I
C
= 0)
Emitter , Collector current
Base current
Total power dissipation at T
case
75°C
Storage Temperature
Junction Temperature
BDS16
120V
120V
BDS17
150V
150V
5V
8A
2A
50W
–65 TO 200°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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