RN1710TE85R datasheet, PDF - EEWORLD Datasheet

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RN1710TE85R: DescriptionTRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size279KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1710TE85R Overview

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN1710TE85R Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G5
Number of components	2
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.3 V

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RN1710,RN1711

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1710,RN1711

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Including two devices in USV (ultra super mini type with 5 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2710 and RN2711

Unit: mm

Equivalent Circuit

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characterisstic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

EBO

stg

Rating

100

200

150

−55

to150

Unit

°C

USV

JEDEC

―

JEITA

―

TOSHIBA

2−2L1A

Weight: 6.2 mg (typ.)

Equivalent Circuit

(Top View)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.)

are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

2010-05-21

RN1710TE85R Related Products

	RN1710TE85R	RN1710(TE85L)	RN1710TE85L	RN1710(TE85R)
Description	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal
package instruction	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	120	120	120	120
JESD-30 code	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5
Number of components	2	2	2	2
Number of terminals	5	5	5	5
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz

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