BSX52A datasheet, PDF - EEWORLD Datasheet

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BSX52A: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size227KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BSX52A Overview

Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN

BSX52A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-18, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	300
JEDEC-95 code	TO-206AA
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz

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SILICON EPITAXIAL

NPN TRANSISTOR

BSX52A

•

Hermetic TO-18 Metal package.

Designed For Low Frequency Amplifiers,

and Low Current Switching Applications

Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated)

VCBO

VCEO

VEBO

Tstg

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

TA = 25°C

Total Power Dissipation at

Derate Above 25°C

Junction Temperature Range

Storage Temperature Range

50V

200mA

300mW

2mW/°C

-65 to +175°C

THERMAL PROPERTIES

Symbols

θJA

Parameters

Thermal Resistance, Junction To Ambient

Max.

500

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 9602

Issue 1

Page 1 of 3

Website:

http://www.semelab-tt.com

BSX52A Related Products

	BSX52A	BSX52AG4	BSX52A.MOD
Description	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-18, 3 PIN	CYLINDRICAL, O-MBCY-W3	HERMETIC SEALED, METAL, TO-18, 3 PIN
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	300	300	300
JEDEC-95 code	TO-206AA	TO-206AA	TO-206AA
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz

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