FRS240H datasheet, PDF - EEWORLD Datasheet

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FRS240H: Description12A, 200V, 0.255ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA; CategoryDiscrete semiconductor The transistor; File Size48KB，6 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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FRS240H Overview

12A, 200V, 0.255ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA

FRS240H Parametric

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
Parts packaging code	TO-257AA
package instruction	FLANGE MOUNT, S-MSFM-P3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.255 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	36 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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FRS240D, FRS240R,

FRS240H

June 1998

12A, 200V, 0.255 Ohm, Rad Hard,

N-Channel Power MOSFETs

Package

TO-257AA

Features

• 12A, 200V, RDS(on) = 0.255Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

Deﬁned End-Point Specs at 300KRAD(Si) and 1000KRAD(Si)

Performance Permits Limited Use to 3000KRAD(Si)

Survives 3E9 RAD(Si)/sec at 80% BVDSS Typically

Survives 2E12 Typically If Current Limited to IDM

5.0nA Per-RAD(Si)/sec Typically

Pre-RAD Speciﬁcations for 1E13 Neutrons/cm

Usable to 1E14 Neutrons/cm

• Gamma Dot

• Photo Current

• Neutron

Description

The Intersil Corporation has designed a series of SECOND GENERATION hard-

ened power MOSFETs of both N and P channel enhancement types with ratings

from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose

hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness

ranging from 1E13n/cm

for 500V product to 1E14n/cm

for 100V product. Dose

rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and

2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld-effect transistor

of the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n

)

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown

above. Reliability screening is available as either non TX (commercial), TX equiva-

lent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired

deviations from the data sheet.

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

Symbol

Absolute Maximum Ratings

(TC = +25

C) Unless Otherwise Speciﬁed

FRS240D, R, H

200

±20

0.60

-55 to +150

300

UNITS

Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Maximum Power Dissipation

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ILM

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Intersil Corporation 1999

File Number

3255.2

4-1

FRS240H Related Products

	FRS240H	FRS240R	FRS240D
Description	12A, 200V, 0.255ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA	12A, 200V, 0.255ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA	12A, 200V, 0.255ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
Parts packaging code	TO-257AA	TO-257AA	TO-257AA
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (ID)	12 A	12 A	12 A
Maximum drain-source on-resistance	0.255 Ω	0.255 Ω	0.255 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA	TO-257AA	TO-257AA
JESD-30 code	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	36 A	36 A	36 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maker	Renesas Electronics Corporation	-	Renesas Electronics Corporation

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