BC490
High Current Transistors
PNP Silicon
Features
•
This is a Pb−Free Device*
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
−80
−80
−4.0
−1.0
625
5.0
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
W
mW/°C
°C
2
BASE
COLLECTOR
1
3
EMITTER
TO−92
CASE 29
STYLE 17
12
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
BC
490
AYWW
G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
Package
TO−92
(Pb−Free)
Shipping
5000 Units / Bulk
BC490G
1
March, 2007 − Rev. 3
Publication Order Number:
BC490/D
BC490
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(I
C
= −10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= −60 Vdc, I
E
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mAdc, V
CE
= −2.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −2.0 Vdc)
(I
C
= −1.0 Adc, V
CE
= −5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= −500 mAdc, I
B
= −50 mAdc)
(I
C
= −1.0 Adc, I
B
= −100 mAdc)
Base −Emitter Saturation Voltage
(I
C
= −500 mAdc, I
B
= −50 mAdc)
(I
C
= −1.0 Adc, I
B
= −100 mAdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −50 mAdc, V
CE
= −2.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle 2%.
f
T
C
ob
C
ib
−
−
−
150
9.0
110
−
−
−
MHz
pF
pF
h
FE
40
60
15
V
CE(sat)
−
−
V
BE(sat)
−
−
−0.9
−1.0
−1.2
−
−0.25
−0.5
−0.5
−
Vdc
−
−
−
−
400
−
Vdc
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
−80
−80
−4.0
−
−
−
−
−
−
−
−
−100
Vdc
Vdc
Vdc
nAdc
Symbol
Min
Typ
Max
Unit
TURN−ON TIME
5.0
ms
+10 V
0
t
r
= 3.0 ns
−1.0 V
100
V
in
5.0
mF
R
B
100
V
CC
+40 V
R
L
OUTPUT
V
in
TURN−OFF TIME
+V
BB
100
R
B
5.0
mF
5.0
ms
t
r
= 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
100
V
CC
+40 V
R
L
OUTPUT
*C
S
< 6.0 pF
*C
S
< 6.0 pF
Figure 1. Switching Time Test Circuits
http://onsemi.com
2
BC490
BANDWIDTH PRODUCT (MHz)
200
V
CE
= −2.0 V
T
J
= 25°C
100
70
50
f T, CURRENT−GAIN
C, CAPACITANCE (pF)
100
70
50
30
20
C
ibo
T
J
= 25°C
10
30
7.0
20
−2.0 −3.0
−5.0 −7.0 −10
−20 −30 −50 −70 −100
I
C
, COLLECTOR CURRENT (mA)
−200
5.0
−0.1
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
V
R
, REVERSE VOLTAGE (VOLTS)
C
obo
−50 −100
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
300
200
t, TIME (ns)
100
70
50
30
20
t
s
t
d
@ V
BE(off)
= −0.5 V
V
CC
= −40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
f
t
r
−500
10
−5.0 −7.0 −10 −20 −30
−50 −70 −100
−200 −300
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
1.0
D = 0.5
0.2
0.1
0.02
0.01
SINGLE PULSE
SINGLE PULSE
Z
qJC(t)
= r(t)
•
R
qJC
Z
qJA(t)
= r(t)
•
R
qJA
20
50
100
200
t, TIME (ms)
500
1.0 k
2.0 k
5.0 k
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN−469)
T
J(pk)
− T
C
= P
(pk)
Z
qJC(t)
T
J(pk)
− T
A
= P
(pk)
Z
qJA(t)
10 k
20 k
50 k
100
2.0
5.0
10
Figure 5. Thermal Response
http://onsemi.com
3
BC490
−1.0 k
−700
IC, COLLECTOR CURRENT (mA)
−500
−200
T
A
= 25°C
T
C
= 25°C
−100
−70
−50
−30
−20
−10
−1.0
V, VOLTAGE (VOLTS)
−300
1.0 s
1.0 ms
100
ms
1.0
T
J
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE(on)
@ V
CE
= 1.0 V
0.4
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
BC490
−2.0 −3.0 −5.0 −7.0 −10
−20 −30 −50 −70 −100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.5
1.0
2.0
5.0
10
50
100
20
I
C
, COLLECTOR CURRENT (mA)
200
500
Figure 6. Active Region, Safe Operating Area
Figure 7. “On” Voltages
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
0.8
I
C
= 10 mA
50
mA
100 mA
250 mA
500 mA
0.6
0.4
R
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
−0.8
−1.2
−1.6
−2.0
R
qVB
for V
BE
0.2
0
0.05
−2.4
−2.8
0.5
0.1
0.2
1.0 2.0
10
0.5
5.0
I
C
, COLLECTOR CURRENT (mA)
20
50
1.0
2.0
10
100
5.0
20
50
I
C
, COLLECTOR CURRENT (mA)
200
500
Figure 8. Collector Saturation Region
Figure 9. Base−Emitter Temperature Coefficient
400
T
J
= 125°C
hFE , DC CURRENT GAIN
200
25°C
−55°C
100
80
60
40
−0.5
V
CE
= −1.0 V
−0.7
−1.0
−2.0
−3.0
−5.0
−7.0
−10
−20
−30
I
C
, COLLECTOR CURRENT (mA)
−50
−70
−100
−200
−300
−500
Figure 10. DC Current Gain
http://onsemi.com
4
BC490
−1.0
T
J
= 25°C
−0.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
−0.6
−0.4
V
BE(on)
@ V
CE
= −1.0 V
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
−1.0
T
J
= 25°C
−0.8
−0.6
I
C
= −10 mA
−50
mA
−100 mA
−250 mA
−500 mA
−0.4
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
−0.5 −1.0
−2.0
−5.0 −10 −20
−50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
−500
−0.2
0
−0.05 −0.1
−0.2
−0.5 −1.0 −2.0
−5.0
I
B
, BASE CURRENT (mA)
−10
−20
−50
Figure 11. “On” Voltages
Figure 12. Collector Saturation Region
R
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
−0.8
−1.2
−1.6
R
qVB
for V
BE
−2.0
−2.4
−2.8
−0.5
−1.0
−2.0
−5.0 −10 −20
−50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
−500
Figure 13. Base−Emitter Temperature Coefficient
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
