BCU86
BCU87
MECHANICAL DATA
Dimensions in mm
6 .0
5 .0
NPN/PNP EPITAXIAL PLANAR
SILICON TRANSISTOR
Ideal For High current Switching
Application
8 .5
FEATURES
1 4 .0
• LOW V
CE(SAT)
• HIGH CURRENT CAPACITY AND WIDE ASO
3 .0
1 .4 5 P IT C H
• ADOPTION OF FBET, MBIT PROCESS
0 .5
T Y P
TO92(EXTENDED)
4 .7
E
C
B
APPLICATIONS
• POWER SUPPLIES
• RELAY DRIVERS
• LAMP DRIVERS
• CAR APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Collector – Base voltage
Collector – Emitter voltage (I
B
= 0)
Emitter – Base voltage
Collector current
Collector Current (Pulse)
Collector Dissipation
(Mounted on Ceramic Board (250mm
2 x 0.8mm)
Junction Temperature
Storage Temperature
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail:
magnatec@semelab.co.uk
Website:
http://www.semelab.co.uk
0 .5
BCU86
60V
50V
6V
3A
6A
1W
1.5W
150°C
BCU87
– 60V
– 50V
– 6V
– 3A
– 6A
–55 to 150°C
Prelim.7/99
Magnatec.
BCU86
BCU87
DYNAMICS CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
VCBO
VEBO
hFE1*
hFE2*
fT
Cob
Collector – Emitter Base
Breakdown Voltage
Collector – Base
Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Test Conditions
IC = 1mA
RBE = 0
IC = 10
m
A
IE = 0
IC = 0
IE = 10
m
A
VCB = 40V
IE = 0
VBE = 4V
IC = 0
VCE = 2V
IC = 100mA
VCE = 2V
IC = 3A
VCE = 10V
IC = 50mA
VCB = 10V
f = 1MHz
BCU86
BCU86
BCU86
BCU86
BCU86
BCU86
BCU86
BCU86
BCU86
Min.
50
60
6
Typ.
Max.
Unit.
V
V
V
1
1
100*
40
150
25
560*
mA
mA
—
—
MHz
pF
* Pulse test t
p
= 300
m
s ,
d £
2%
Reverse Polarity for PNP, BCU87
* The BCU86 / BCU87 are classified by 100mA h
FE
as follows:
100 R 200
140 S 280
200 T 400
280 U 560
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail:
magnatec@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim.7/99