BUL381/BUL382
BULK381/BULK382
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
SGS-THOMSON PREFERRED SALESTYPES
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
o
FULLY CHARACTERISED AT 125 C
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL381, BUL382, BULK381 and BULK382
are manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. They use a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
TO-220
3
1
2
1
2
3
SOT-82
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
C ES
V
CEO
V
EBO
I
C
I
CM
I
B
I
B M
P
tot
T
stg
T
j
Parameter
BUL381/382
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25 C
Storage Temperature Range
Max. Operating Junction Temperature
o
Value
BULK381/382
800
400
9
5
8
2
4
70
-65 to 150
150
60
Unit
V
V
V
A
A
A
A
W
o
o
C
C
1/8
December 1994
BUL381/382 BULK381/382
THERMAL DATA
TO220
R
thj-cas e
R
thj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
o
SOT-82
2.08
80
o
o
Max
Max
1.78
62.5
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25 C unless otherwise specified)
Symbol
I
CE S
I
CEO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Test Conditions
V
CE
= 800 V
V
CE
= 800 V
V
CE
= 400 V
I
C
= 100 mA
I
E
= 10 mA
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 1 A
I
C
= 2 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.8 A
I
B
= 0.2 A
I
B
= 0.4 A
V
CE
= 5 V
V
CE
= 5 V
8
10
1
2.2
800
1
2.5
800
1.7
75
2.6
150
2.6
120
µs
µs
ns
µs
µs
ns
µs
ns
µs
ns
L = 25 mH
400
9
0.5
0.7
1.1
1.1
1.2
T
j
= 125 C
o
Min.
Typ.
Max.
100
500
250
Unit
µA
µA
µA
V
V
V
V
V
V
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
V
CE (sat)
∗
Emitter-Base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
V
B E(sat)
∗
h
FE
∗
I
C
= 2 A
I
C
= 10 mA
t
O N
t
s
t
f
t
O N
t
s
t
f
t
s
t
f
t
s
t
f
V
CC
= 250 V I
C
= 2 A
I
B1
= 0.4 A I
B2
= -0.4 A
(for BUL381/BULK381 only)
V
CC
= 250 V I
C
= 2 A
I
B1
= 0.4 A I
B2
= -0.4 A
(for BUL382/BULK382 only)
I
C
= 2 A V
CL
= 250 V
I
B1
= 0.4 A I
B2
= -0.8 A
L = 200
µH
I
C
= 2 A V
CL
= 250 V
I
B1
= 0.4 A I
B2
= -0.8 A
L = 200
µH
T
j
= 125
o
C
1.4
1.7
∗
Pulsed: Pulse durati on = 300
µs,
duty cycle 1.5 %
2/8
BUL381/382 BULK381/382
Safe Operating Areas for TO-220
Safe Operating Areas for SOT-82
Derating Curves
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
3/8
BUL381/382 BULK381/382
Resistive Load Switching Test Circuit
RBSOA and Inductive Load Switching Test
Circuit
(1) F ast electroni c swi tch
(2) Non-inducti ve Resistor
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
5/8
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