RN1701JE~RN1706JE
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN1701JE,RN1702JE,RN1703JE
RN1704JE,RN1705JE,RN1706JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
•
•
A wide range of resistor values is available for use in various circuit
designs.
Complementary to RN2701JE~RN2706JE
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1701JE
RN1702JE
R2
RN1703JE
RN1704JE
E
RN1705JE
RN1706JE
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
B
R1
JEDEC
JEITA
TOSHIBA
―
―
2-2P1D
Weight: 0.003 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1701JE~
1706JE
RN1701JE~
1704JE
RN1705JE,
RN1706JE
Symbol
V
CBO
V
CEO
Rating
50
50
10
V
EBO
5
I
C
P
C
(Note 1)
T
j
T
stg
100
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Equivalent Circuit
(top view)
5
Q1
4
Q2
Emitter-base voltage
1
2
3
Collector current
Collector power dissipation RN1701JE~
1706JE
Junction temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
Embedded System
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