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RN2424(TE85L2)

Description
TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size549KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN2424(TE85L2) Overview

TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal

RN2424(TE85L2) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Parts packaging codeSC-59
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)90
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
RN2421~RN2427
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2421,RN2422,RN2423,RN2424
RN2425,RN2426,RN2427
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
High current type (I
C(MAX)
=
−800mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Low V
CE (sat)
Complementary to RN1421~RN1427
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2421
RN2422
RN2423
RN2424
RN2425
RN2426
RN2427
R1 (kΩ)
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
JEDEC
JEITA
TOSHIBA
SC-59
2-3F1A
Weight: 0.012 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
RN2421~2427
RN2421~2424
Emitter-Base voltage
RN2425, 2426
RN2427
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2421~2427
I
c
P
c
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−10
−5
−6
−800
200
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01

RN2424(TE85L2) Related Products

RN2424(TE85L2) RN2424(TE85L) RN2424(TE85R) RN2424(TE85R2)
Description TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP General Purpose Small Signal
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
Parts packaging code SC-59 SC-59 SC-59 SC-59
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 90 90 90 90
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz
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