RN2421~RN2427
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2421,RN2422,RN2423,RN2424
RN2425,RN2426,RN2427
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
High current type (I
C(MAX)
=
−800mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Low V
CE (sat)
Complementary to RN1421~RN1427
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2421
RN2422
RN2423
RN2424
RN2425
RN2426
RN2427
R1 (kΩ)
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
JEDEC
JEITA
TOSHIBA
―
SC-59
2-3F1A
Weight: 0.012 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
RN2421~2427
RN2421~2424
Emitter-Base voltage
RN2425, 2426
RN2427
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2421~2427
I
c
P
c
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−10
−5
−6
−800
200
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01