This NPN Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
Features
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High Current: I
C
= 1.0 A
The SOT−223 Package Can Be Soldered Using Wave or Reflow
SOT−223 package ensures level mounting, resulting in improved
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
The PNP Complement is BCP69T1
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−223
CASE 318E
STYLE 1
COLLECTOR 2,4
BASE
1
EMITTER 3
MAXIMUM RATINGS
(T
C
= 25C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation @ T
A
= 25C
(Note 1)
Derate above 25C
Operating and Storage Temperature
Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Value
20
25
5.0
1.0
1.5
12
T
J
, T
stg
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
W
mW/C
C
CA
A
Y
W
G
MARKING DIAGRAM
AYW
CA
G
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient (Surface Mounted)
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
Symbol
R
qJA
T
L
Max
83.3
260
10
Unit
C/W
C
Sec
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BCP68T1G
SBCP68T1G
BCP68T3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
†
1,000/Tape & Reel
1,000/Tape & Reel
4,000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 7
1
Publication Order Number:
BCP68T1/D
BCP68T1G, SBCP68T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= 100
mAdc,
I
E
= 0)
Collector−Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0)
Emitter−Base Breakdown Voltage (I
E
= 10
mAdc,
I
C
= 0)
Collector−Base Cutoff Current (V
CB
= 25 Vdc, I
E
= 0)
Emitter−Base Cutoff Current (V
EB
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 5.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
Collector−Emitter Saturation Voltage (I
C
= 1.0 Adc, I
B
= 100 mAdc)
Base−Emitter On Voltage (I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain
−
Bandwidth Product (I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
f
T
−
60
−
MHz
h
FE
50
85
60
−
−
−
−
−
−
−
−
375
−
0.5
1.0
−
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
25
20
5.0
−
−
−
−
−
−
−
−
−
−
10
10
Vdc
Vdc
Vdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
V
CE(sat)
V
BE(on)
Vdc
Vdc
TYPICAL ELECTRICAL CHARACTERISTICS
f T, CURRENT‐GAIN‐BANDWIDTH PRODUCT (MHz)
300
200
hFE, DC CURRENT GAIN
300
200
100
T
J
= 125C
= 25C
= - 55C
100
70
50
V
CE
= 10 V
T
J
= 25C
f = 30 MHz
V
CE
= 1.0 V
10
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
30
10
100
200
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 1. DC Current Gain
Figure 2. Current-Gain-Bandwidth Product
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2
BCP68T1G, SBCP68T1G
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
T
J
= 25C
V
BE(sat)
@ I
C
/I
B
= 10
Cib, CAPACITANCE (pF)
80
T
J
= 25C
70
0.8
V, VOLTAGE (VOLTS)
0.6
V
BE(on)
@ V
CE
= 1.0 V
60
0.4
50
0.2
V
CE(sat)
@ I
C
/I
B
= 10
1.0
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
40
0
30
0
1.0
2.0
3.0
4.0
V
R
, REVERSE VOLTAGE (VOLTS)
5.0
Figure 3. “On” Voltage
Figure 4. Capacitance
T
J
= 25C
Cob, CAPACITANCE (pF)
20
R
VB, TEMPERATURE COEFFICIENT (mV/
C)
25
- 0.8
-1.2
-1.6
R
qVB
for V
BE
- 2.0
15
10
- 2.4
5.0
0
5.0
10
15
V
R
, REVERSE VOLTAGE (VOLTS)
20
- 2.8
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 5. Capacitance
Figure 6. Base-Emitter Temperature Coefficient
1.0
T
J
= 25C
VCE , COLLECTOR VOLTAGE (V)
0.8
0.6
= 1000 mA
I C = 10 mA
= 100 mA
0.4
= 50 mA
0.2
= 500 mA
0
0.01
0.1
1.0
I
B
, BASE CURRENT (mA)
10
100
Figure 7. Saturation Region
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3
BCP68T1G, SBCP68T1G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
H
E
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10
4
H
E
E
1
2
3
e1
b
e
A
q
L
L1
C
q
0.08 (0003)
A1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
mm
inches
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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