EEWORLDEEWORLDEEWORLD

Part Number

Search

BC214B

Description
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size66KB,4 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
Download Datasheet Parametric Compare View All

BC214B Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

BC214B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)320 MHz
VCEsat-Max0.6 V
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC212, BC212A, BC212B
BC213, BC213A, BC213B,
BC213C
BC214, BC214B, BC214C
TO-92
Plastic Package
Silicon Small Signal General Purpose Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
BC212
50
60
BC213
30
45
5
100
350
2.8
1
8
-55 to +150
BC214
30
45
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
R
th(j-a)
R
th(j-c)
357
125
ºC/W
ºC/W
Continental Device India Limited
Data Sheet
Page 1 of 4

BC214B Related Products

BC214B BC213B BC213A
Description Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? conform to conform to conform to
Maker CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.]
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 6 pF 6 pF 6 pF
Collector-emitter maximum voltage 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 200 100
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.35 W 0.35 W 0.35 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 320 MHz 360 MHz 360 MHz
VCEsat-Max 0.6 V 0.6 V 0.6 V

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 734  1674  765  1645  856  15  34  16  18  10 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号