D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
BUL147
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL147 have an applications specific state−of−the−art die
designed for use in electric fluorescent lamp ballasts to 180 Watts and
in Switchmode Power supplies for all types of electronic equipment.
Features
http://onsemi.com
•
Improved Efficiency Due to Low Base Drive Requirements:
♦
High and Flat DC Current Gain
♦
Fast Switching
♦
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
•
Parametric Distributions are Tight and Consistent Lot−to−Lot
•
Two Package Choices: Standard TO−220 or Isolated TO−220
•
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
−
Continuous
−
Peak (Note 1)
−
Continuous
−
Peak (Note 1)
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
J
, T
stg
Value
400
700
9.0
8.0
16
4.0
8.0
125
1.0
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
POWER TRANSISTOR
8.0 AMPERES, 700 VOLTS,
45 AND 125 WATTS
1
2
TO−220AB
CASE 221A−09
STYLE 1
3
MARKING DIAGRAM
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
BUL147G
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.0
62.5
260
Unit
_C/W
_C/W
_C
BUL147
A
Y
WW
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
BUL147
BUL147G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
Package
TO−220
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
August, 2006
−
Rev. 7
1
Publication Order Number:
BUL147/D
BUL147
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mA, L = 25 mH)
Collector Cutoff Current
(V
CE
= Rated V
CEO
, I
B
= 0)
Collector Cutoff Current
(V
CE
= Rated V
CES
, V
EB
= 0)
Collector Cutoff Current
(V
CE
= 500 V, V
EB
= 0)
Emitter Cutoff Current
(V
EB
= 9.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(I
C
= 2.0 Adc, I
B
= 0.2 Adc)
(I
C
= 4.5 Adc, I
B
= 0.9 Adc)
Collector−Emitter Saturation Voltage
(I
C
= 2.0 Adc, I
B
= 0.2 Adc)
(I
C
= 4.5 Adc, I
B
= 0.9 Adc)
DC Current Gain (I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
DC Current Gain
(I
C
= 4.5 Adc, V
CE
= 1.0 Vdc)
DC Current Gain
(I
C
= 2.0 Adc, V
CE
= 1.0 Vdc)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 8.0 V)
(I
C
= 2.0 Adc
I
B1
= 200 mAdc
V
CC
= 300 V)
1.0
ms
3.0
ms
1.0
ms
3.0
ms
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
f
T
C
ob
C
ib
MHz
−
−
−
−
−
−
−
−
−
−
−
14
100
1750
3.0
5.5
0.8
1.4
3.3
8.5
0.4
1.0
−
pF
175
pF
2500
−
−
−
−
−
−
−
−
V
BE(sat)
Vdc
−
−
−
−
−
−
14
−
8.0
7.0
10
10
0.82
0.92
0.25
0.3
0.35
0.35
−
30
12
11
18
20
1.1
1.25
Vdc
0.5
0.5
0.7
0.8
34
−
−
−
−
−
−
V
CEO(sus)
I
CEO
I
CES
(T
C
= 125°C)
(T
C
= 125°C)
I
EBO
Vdc
400
−
−
−
−
−
−
−
−
−
−
−
−
100
100
500
100
100
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
mAdc
V
CE(sat)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 25°C to 125°C)
h
FE
Dynamic Saturation Voltage:
Determined 1.0
ms
and
3.0
ms
respectively after
rising I
B1
reaches 90%
of final I
B1
(see Figure 18)
V
CE(dsat)
V
(I
C
= 5.0 Adc
I
B1
= 0.9 Adc
V
CC
= 300 V)
http://onsemi.com
2
BUL147
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted) (continued)
Characteristic
Turn−On Time
Turn−Off Time
(T
C
= 125°C)
Turn−On Time
Turn−Off Time
(T
C
= 125°C)
Fall Time
Storage Time
(T
C
= 125°C)
Crossover Time
(T
C
= 125°C)
Fall Time
Storage Time
(T
C
= 125°C)
Crossover Time
(T
C
= 125°C)
Fall Time
Storage Time
(T
C
= 125°C)
Crossover Time
(T
C
= 125°C)
(I
C
= 4.5 Adc, I
B1
= 0.9 Adc
I
B2
= 0.9 Adc)
(T
C
= 125°C)
(I
C
= 4.5 Adc, I
B1
= 0.9 Adc
I
B2
= 2.25 Adc)
(T
C
= 125°C)
(I
C
= 2.0 Adc, I
B1
= 0.2 Adc
I
B2
= 1.0 Adc)
(I
C
= 4.5 Adc, I
B1
= 0.9 Adc
I
B1
= 2.25 Adc, V
CC
= 300 V)
(T
C
= 125°C)
(I
C
= 2.0 Adc, I
B1
= 0.2 Adc
I
B2
= 1.0 Adc, V
CC
= 300 V)
Symbol
t
on
t
off
t
on
t
off
Min
−
−
−
−
−
−
−
−
Typ
200
190
1.0
1.6
85
100
1.5
2.0
Max
350
−
2.5
−
150
−
2.5
−
Unit
ns
ms
ns
ms
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 20
ms)
(T
C
= 125°C)
SWITCHING CHARACTERISTICS: Inductive Load
(V
clamp
= 300 V, V
CC
= 15 V, L = 200
mH)
(T
C
= 125°C)
t
fi
t
si
t
c
t
fi
t
si
t
c
t
fi
t
si
t
c
−
−
−
−
−
−
−
−
−
−
−
−
60
−
2.6
−
−
−
100
120
1.3
1.9
210
230
80
100
1.6
2.1
170
200
−
150
−
4.3
200
330
180
−
2.5
−
350
−
150
−
3.2
−
300
−
180
−
3.8
−
350
−
ns
ms
ns
ns
ms
ns
ns
ms
ns
http://onsemi.com
3
BUL147
TYPICAL STATIC CHARACTERISTICS
100
T
J
= 125°C
h FE , DC CURRENT GAIN
T
J
= 25°C
10
T
J
= − 20°C
V
CE
= 1 V
h FE , DC CURRENT GAIN
100
T
J
= 125°C
T
J
= 25°C
10
T
J
= − 20°C
V
CE
= 5 V
1
0.01
0.1
1
10
1
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
T
J
= 25°C
V CE , VOLTAGE (VOLTS)
V CE , VOLTAGE (VOLTS)
1.5
I
C
= 1 A
3A
5A
8A
10 A
10
1
1
0.1
I
C
/I
B
= 10
I
C
/I
B
= 5
0.5
0
0.01
0.1
1
I
B
, BASE CURRENT (AMPS)
10
0.01
0.01
T
J
= 25°C
T
J
= 125°C
0.1
1
I
C
COLLECTOR CURRENT (AMPS)
10
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
1.3
1.2
V BE , VOLTAGE (VOLTS)
1.1
10000
C
ib
1000
C, CAPACITANCE (pF)
C
ob
100
T
J
= 25°C
f = 1 MHz
1
0.9
0.8
0.7
0.6
0.5 T
J
= 125°C
0.4
0.01
0.1
1
I
C
/I
B
= 5
I
C
/I
B
= 10
10
T
J
= 25°C
10
1
1
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
I
C
, COLLECTOR CURRENT (AMPS)
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
http://onsemi.com
4
京公网安备 11010802033920号
EEWORLD
