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BC846BDW1T1,
BC847BDW1T1,
BC848CDW1T1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT-363/SC-88 which is
designed for low power surface mount applications.
Features
(3)
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(2)
(1)
Q
1
Q
2
•
Pb-Free Packages are Available
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current -
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
6
(4)
(5)
(6)
MARKING
DIAGRAM
1
SOT-363
CASE 419B
STYLE 1
1x MG
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR- 5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature Range
1. FR-5 = 1.0 x 0.75 x 0.062 in
Symbol
P
D
Max
380
250
Unit
mW
1x = Specific Device Code
x = B, F, G, L
M = Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
3.0
R
qJA
T
J
, T
stg
328
- 55 to +150
mW/°C
°C/W
°C
©
Semiconductor Components Industries, LLC, 2007
1
November, 2007 - Rev. 5
Publication Order Number:
BC846BDW1T1/D
BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
(I
C
= 10 mA)
V
(BR)CEO
BC846 Series
BC847 Series
BC848 Series
V
(BR)CES
BC846 Series
BC847 Series
BC848 Series
V
(BR)CBO
BC846 Series
BC847 Series
BC848 Series
V
(BR)EBO
BC846 Series
BC847 Series
BC848 Series
I
CBO
6.0
6.0
5.0
-
-
-
-
-
-
-
-
-
-
15
5.0
nA
mA
80
50
30
-
-
-
-
-
-
V
80
50
30
-
-
-
-
-
-
V
65
45
30
-
-
-
-
-
-
V
V
Symbol
Min
Typ
Max
Unit
Collector - Emitter Breakdown Voltage
(I
C
= 10
mA,
V
EB
= 0)
Collector - Base Breakdown Voltage
(I
C
= 10
mA)
Emitter - Base Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
h
FE
BC846B, BC847B,
BC847C, BC848C
BC846B, BC847B,
BC847C, BC848C
V
CE(sat)
V
BE(sat)
V
BE(on)
-
-
200
420
-
-
-
-
580
-
150
270
290
520
-
-
0.7
0.9
660
-
-
-
450
800
0.25
0.6
-
-
700
770
-
(I
C
= 2.0 mA, V
CE
= 5.0 V)
Collector - Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector - Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base - Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base - Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base - Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base - Emitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL-SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
V
V
mV
f
T
C
obo
NF
100
-
-
-
-
-
-
4.5
10
MHz
pF
dB
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BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
TYPICAL CHARACTERISTICS - BC847 SERIES & BC848 SERIES
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.5
50
1.0
20
2.0
5.0 10
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
V
BE(on)
@ V
CE
= 10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
Figure 1. Normalized DC Current Gain
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
Figure 2. “Saturation” and “On” Voltages
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
400
300
200
Figure 4. Base-Emitter Temperature Coefficient
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
1.0
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current-Gain - Bandwidth Product
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3
BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
TYPICAL CHARACTERISTICS - BC846 SERIES
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 5 V
T
A
= 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
T
A
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE
@ V
CE
= 5.0 V
0.4
0.2
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0.1 0.2
10
100
1.0
I
C
, COLLECTOR CURRENT (mA)
0
0.2
0.5
1.0
10 20
2.0
5.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
Figure 7. Normalized DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
T
A
= 25°C
1.6
20 mA
1.2
I
C
=
10 mA
50 mA
100 mA
200 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-1.0
-1.4
-1.8
q
VB
for V
BE
-2.2
-55°C to 125°C
0.8
0.4
-2.6
0
-3.0
0.2
0.5
10 20
1.0 2.0
5.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
0.02
0.05
0.1
0.2
0.5
1.0 2.0
I
B
, BASE CURRENT (mA)
5.0
10
20
Figure 9. Collector Saturation Region
Figure 10. Base-Emitter Temperature Coefficient
T
A
= 25°C
C, CAPACITANCE (pF)
20
C
ib
10
6.0
4.0
C
ob
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
500
V
CE
= 5 V
T
A
= 25°C
200
100
50
20
2.0
0.1
0.2
0.5
1.0 2.0
10 20
5.0
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current-Gain - Bandwidth Product
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