SOT-23 Plastic-Encapsulate Transistors
BC856ALT1, BLT1
TRANSISTOR (PNP)
BC857ALT1, BLT1 CLT1
BC858ALT1, BLT1 CLT1
FEATURES
Power dissipation
P
CM:
0.225
W (Tamb=25℃) Note1
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
1. 0
Collector current
I
CM:
-0.1
A
Collector-base voltage
V
CBO:
BC856
-80 V
BC857
-50 V
BC858
-30 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
Note1: Transistor mounted on an FR4 Printed-circuit board.
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
BC856
BC857
BC858
Collector-emitter breakdown voltage
BC856
BC857
BC858
Emitter-base breakdown voltage
Collector cut-off current
BC856
BC857
BC858
Collector cut-off current
BC856
BC857
BC858
Emitter cut-off current
DC current gain
BC856A, 857A,858A
BC856B, 857B,858B
BC857C,BC858C
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
h
FE(1)
I
EBO
I
CEO
I
CBO
V
EBO
V
CEO
V
CBO
2. 4
1. 3
2. 9
1. 9
0. 95
0. 95
Unit: mm
unless otherwise specified)
Symbol
Test
conditions
MIN
-80
Ic= -10
µ
A, I
E
=0
-50
-30
-65
Ic= -10 mA, I
B
=0
-45
-30
I
E
= -10
µ
A, I
C
=0
V
CB
= -70 V , I
E
=0
V
CB
= -45 V , I
E
=0
V
CB
= -25 V , I
E
=0
V
CE
= -60 V , I
B
=0
V
CE
= -40 V , I
B
=0
V
CE
= -25 V , I
B
=0
V
EB
= -5 V ,
I
C
=0
125
V
CE
= -5V, I
C
= -2mA
220
420
I
C
=-100mA, I
B
= -5 mA
I
C
= -100 mA, I
B
= -5mA
V
CE
= -5 V, I
C
= -10mA
-0.1
250
475
800
-0.5
-1.1
V
V
-0.1
-0.1
-5
V
V
V
MAX
UNIT
0. 4
µ
A
µ
A
µ
A
Transition frequency
f
T
f=
100MHz
100
MHz
DEVICE MARKING
BC856ALT1=3A; BC856BLT1=3B; BC857ALT1=3E;BC857BLT1=3F;
BC857CLT1=3G; BC858ALT1=3J; BC858BLT1=3K; BC858CLT1=3L
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