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BC490, BC490A, BC490B
High Current Transistors
PNP Silicon
•
Device Marking: 490
Device Marking:
490A
Device Marking:
490B
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COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
−80
−80
−4.0
−1.0
625
5.0
1.5
12
−55
to
+150
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
2
BASE
3
EMITTER
PD
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
R
θJA
R
θJC
Max
200
83.3
Unit
°C/W
°C/W
CASE 29
TO−92
STYLE 17
ORDERING INFORMATION
Device
BC490
BC490A
BC490AZL1
BC490BZL1
Package
TO−92
TO−92
TO−92
TO−92
Shipping
5000 Units/Box
5000 Units/Box
2000/Ammo Pack
2000/Ammo Pack
Semiconductor Components Industries, LLC, 2001
June, 2001
−
Rev. 1
312
Publication Order Number:
BC490/D
BC490, BC490A, BC490B
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage(1)
(IC =
−10
mAdc, IB = 0)
Collector
−Base
Breakdown Voltage
(IC =
−100
mAdc,
IE = 0)
Emitter
−Base
Breakdown Voltage
(IE =
−10
mAdc,
IC = 0)
Collector Cutoff Current
(VCB =
−60
Vdc, IE = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
−80
−80
−4.0
—
—
—
—
—
—
—
—
−100
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISTICS*
DC Current Gain
(IC =
−10
mAdc, VCE =
−2.0
Vdc)
(IC =
−100
mAdc, VCE =
−2.0
Vdc)
(IC =
−1.0
Adc, VCE =
−5.0
Vdc)
Collector
−Emitter
Saturation Voltage
(IC =
−500
mAdc, IB =
−50
mAdc)
(IC =
−1.0
Adc, IB =
−100
mAdc)
Base
−Emitter
Saturation Voltage
(IC =
−500
mAdc, IB =
−50
mAdc)
(IC =
−1.0
Adc, IB =
−100
mAdc)
VCE(sat)
hFE
BC490
BC490A
BC490B
—
40
60
100
160
15
—
—
—
—
—
—
140
—
—
−0.25
−0.5
−0.9
−1.0
—
400
250
400
—
Vdc
−0.5
—
Vdc
−1.2
—
VBE(sat)
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC =
−50
mAdc, VCE =
−2.0
Vdc, f = 100 MHz)
Output Capacitance
(VCB =
−10
Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB =
−0.5
Vdc, IC = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle 2%.
TURN-ON TIME
5.0
µs
+10 V
0
tr = 3.0 ns
-1.0 V
100
Vin
5.0
µF
RB
100
VCC
+40 V
RL
OUTPUT
*CS < 6.0 pF
5.0
µs
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Vin
5.0
µF
TURN-OFF TIME
+VBB
100
RB
100
VCC
+40 V
RL
OUTPUT
*CS < 6.0 pF
fT
Cob
Cib
—
—
—
150
9.0
110
—
—
—
MHz
pF
pF
Figure 1. Switching Time Test Circuits
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313
BC490, BC490A, BC490B
BANDWIDTH PRODUCT (MHz)
200
VCE = -2.0 V
TJ = 25°C
100
70
50
C, CAPACITANCE (pF)
100
70
50
30
20
Cibo
TJ = 25°C
f T, CURRENT-GAIN
30
20
-2.0 -3.0
10
7.0
Cobo
-5.0 -7.0 -10
-20 -30 -50 -70 -100
IC, COLLECTOR CURRENT (mA)
-200
5.0
-0.1
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
-50 -100
Figure 2. Current−Gain — Bandwidth Product
1.0 k
700
500
300
200
t, TIME (ns)
100
70
50
30
20
ts
Figure 3. Capacitance
td @ VBE(off) = -0.5 V
VCC = -40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
tf
tr
-500
10
-5.0 -7.0 -10 -20 -30
-50 -70 -100
-200 -300
IC, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
1.0
D = 0.5
0.2
0.1
0.02
P(pk)
t1
t2
0.01
SINGLE PULSE
SINGLE PULSE
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN−469)
T
J(pk)
−
T
C
= P
(pk)
Z
qJC(t)
T
J(pk)
−
T
A
= P
(pk)
Z
qJA(t)
Z
θJC(t)
= r(t)
•
R
θJC
Z
θJA(t)
= r(t)
•
R
θJA
20
50
100
200
t, TIME (ms)
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100
2.0
5.0
10
Figure 5. Thermal Response
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314
BC490, BC490A, BC490B
-1.0 k
-700
IC, COLLECTOR CURRENT (mA)
-500
-200
-100
-70
-50
-30
-20
-10
-1.0
TA = 25°C
TC = 25°C
1.0 ms
V, VOLTAGE (VOLTS)
-300
1.0 s
100
µs
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5
1.0
2.0
5.0
10
50
100
20
IC, COLLECTOR CURRENT (mA)
200
500
VBE(on) @ VCE = 1.0 V
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
BC490
-20 -30 -50 -70 -100
-2.0 -3.0 -5.0 -7.0 -10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Active Region, Safe Operating Area
Figure 7. “On” Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C
0.8
0.6
0.4
0.2
0
0.05
IC = 10 mA
50
mA
100 mA
250 mA
500 mA
R
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
-0.8
-1.2
-1.6
-2.0
R
θVB
for VBE
-2.4
-2.8
0.5
0.1
0.2
1.0 2.0
10
0.5
5.0
IC, COLLECTOR CURRENT (mA)
20
50
1.0
2.0
5.0
20
50
10
100
IC, COLLECTOR CURRENT (mA)
200
500
Figure 8. Collector Saturation Region
Figure 9. Base−Emitter Temperature Coefficient
400
TJ = 125°C
hFE , DC CURRENT GAIN
200
25°C
-55°C
VCE = -1.0 V
100
80
60
40
-0.5
-0.7
-1.0
-2.0
-3.0
-5.0
-7.0
-10
-20
-30
IC, COLLECTOR CURRENT (mA)
-50
-70
-100
-200
-300
-500
Figure 10. DC Current Gain
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