SOT-23 Plastic-Encapsulate Transistors
BC 817-16LT1 BC817-25LT1
SOT-23
BC817-40LT1
FEATURES
TRANSISTOR (NPN)
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Parameter
Value
50
45
5
0.5
0.3
-55-150
Units
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collecter capactiance
Transition frequency
V
CE
(sat)
V
BE
(sat)
V
BE(ON)
Cob
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
unless
Test
otherwise
conditions
specified）
MIN
50
45
5
0.1
0.1
100
40
0.7
1.2
1.2
10
100
V
V
V
pF
MAX
UNIT
V
V
V
I
C
= 10
µ
A, I
E
=0
I
C
= 10 mA, I
B
=0
I
E
= 1
µ
A, I
C
=0
V
CB
= 45 V , I
E
=0
V
EB
= 4V,
V
CE
= 1 V,
V
CE
= 1 V,
I
C
=0
I
C
= 100mA
I
C
= 500mA
µ
A
µ
A
600
I
C
= 500mA, I
B
= 50 mA
I
C
= 500mA, I
B
= 50 mA
V
CE
= 1 V,
I
C
= 500mA
V
CB
=10V ,f=1MHz
V
CE
= 5 V,
I
C
= 10mA
f
T
h
FE
(1)
BC817-16LT1
100-250
6A
f=
100MHz
BC817-25LT1
160-400
6B
MHz
CLASSIFICATION OF
Rank
Range
Marking
BC817-40LT1
250-600
6C
Microchip MCU
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