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D10XB20-4100

Description
Bridge Rectifier Diode, 1 Phase, 2.7A, Silicon,
CategoryDiscrete semiconductor    diode   
File Size187KB,6 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
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D10XB20-4100 Overview

Bridge Rectifier Diode, 1 Phase, 2.7A, Silicon,

D10XB20-4100 Parametric

Parameter NameAttribute value
MakerSHINDENGEN
package instructionR-PSFM-T4
Reach Compliance Codeunknown
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current120 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current2.7 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum reverse current0.00001 µA
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
SHINDENGEN
General Purpose Rectifiers
SIL Bridges
D10XB20
200V 10A
FEATURES
Thin Single In-Line Package
High current capacity with Small Package
High IFSM
Superior Thermal Conductivity
APPLICATION
Switching power supply
Home Appliances, Office Equipment
Factory Automation, Inverter
OUTLINE DIMENSIONS
Case : 3S
Unit : mm
RATINGS
œAbsolute
Maximum Ratings (If not specified Tc=25Ž)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
V
RM
Maximum Reverse Voltage
I
O
Average Rectified Forward Current
50Hz sine wave, R-load With heatsink
Peak Surge Forward Current
Current Squared Time
Dielectric Strength
Mounting Torque
I
FSM
I
2
t
Vdis
TOR
Tc=100Ž
50Hz sine wave, R-load@ Without heatsink Ta=25Ž
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25Ž
1ms…tƒ10ms@Tj=25Ž
Terminals to case, AC 1 minute
iRecommended
torqueF0.5N¥mj
Ratings
-40`150
150
200
10
2.7
120
60
2.5
0.8
Ratings
Max.1.1
Max.10
Max.2.3
Max.6
Max.26
Unit
Ž
Ž
V
A
A
A
2
s
kV
N¥m
Unit
V
ÊA
Ž/W
œElectrical
Characteristics (If not specified Tc=25Ž)
Item
Symbol
Conditions
V
F
I
F
=5A,
Pulse measurement, Rating of per diode
Forward Voltage
V
R
=V
RM
, Pulse measurement, Rating of per diode
Reverse Current
I
R
Æjc
junction to case
@@With
heatsink
Æjl
Thermal Resistance
junction to lead
@@
Without heatsink
Æja
junction to ambient Without heatsink
Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
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