Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 80pF C(T), 100V, Silicon, Abrupt,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Dynex |
| package instruction | O-PALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 100 V |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 10% |
| Minimum diode capacitance ratio | 3.2 |
| Nominal diode capacitance | 80 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| JESD-30 code | O-PALF-W2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 100 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| minimum quality factor | 200 |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Varactor Diode Classification | ABRUPT |
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