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BZG03-C200

Description
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial
CategoryDiscrete semiconductor    diode   
File Size100KB,3 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric View All

BZG03-C200 Overview

Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial

BZG03-C200 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Code_compli
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance500 Ω
JESD-609 codee3
Number of components1
Maximum operating temperature175 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation3 W
Nominal reference voltage200 V
surface mountYES
Terminal surfaceTin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6%
Working test current5 mA
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
BZG03-C10 ~ BZG03-C200
FEATURES :
VOLTAGE REGULATOR DIODES
SMA
* Excellent stability
* Low leakage current
* Pb / RoHS Free
1.6
±
0.25
2.6
±
0.15
2.3
±
0.2
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.060 gram (Approximately)
1.6
±
0.25
Dimensions in millimeters
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Parameter
Power dissipation
Power dissipation
Symbol
P
tot
P
tot
Condition
Ttp = 100 °C, see Fig. 1
Ta = 50 °C, see Fig. 1; device
mounted on an Al
2
O
3
PCB (Fig. 4)
tp = 100 µs; square pulse;
Tj = 25°C prior to surge; see Fig. 2
I
F
= 0.5 A; Tj = 25 °C; see Fig. 3
5.3
±
0.35
4.2
±
0.25
* Complete Voltage Range 10 to 200 Volts
* High maximum operating temperature
1.3
±
0.2
Min.
-
-
Max.
3
1.25
Unit
W
W
Non-repetitive peak reverse
Forward voltage
Junction Temperature Range
Storage Temperature Range
P
ZSM
V
F
T
j
T
stg
-
-
-65
-65
600
1.2
+175
+175
W
V
°C
°C
THERMAL CHARACTERISTICS
Parameter
Thermal resistance from junction to tie-point
Thermal resistance from junction to ambient
Note
1. Device mounted on an AlO
3
printed-circuit board, 0.7 mm thick; thickness of Cu-layer
≥35
µm, see Fig.4.
2
Symbol
R
th j-tp
R
th j-a
(Note 1)
Condition
Value
25
100
Unit
K/W
K/W
Page 1 of 3
Rev. 08 : September 18, 2008

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