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DIM300WHS17-A000

Description
Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, W, MODULE-7
CategoryDiscrete semiconductor    The transistor   
File Size143KB,8 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
Environmental Compliance  
Download Datasheet Parametric View All

DIM300WHS17-A000 Overview

Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, W, MODULE-7

DIM300WHS17-A000 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDynex
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)300 A
Collector-emitter maximum voltage1700 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)1530 ns
Nominal on time (ton)650 ns
DIM300WHS17-A000
DIM300WHS17-A000
Half Bridge IGBT Module
FDS5694-1.2 December 2003
FEATURES
I
I
I
10µs Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Baseplate
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
*
(max)
I
C
(max)
I
C(PK)
1700V
2.7V
300A
600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I
I
Inverters
Motor Controllers
7(E
2
)
6(G
2
)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM300WHS17-A000 is a half bridge switch 1700V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
1(E1C2)
2(E2)
3(C1)
4(G
1
)
5(E
1
)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM300WHS17-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
www.dynexsemi.com
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