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DIM400BSS17-E000

Description
Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, B, MODULE-5
CategoryDiscrete semiconductor    The transistor   
File Size160KB,9 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
Environmental Compliance  
Download Datasheet Parametric View All

DIM400BSS17-E000 Overview

Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, B, MODULE-5

DIM400BSS17-E000 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDynex
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X5
Contacts5
Reach Compliance Codeunknown
Other featuresLOW CONDUCTION LOSS
Shell connectionISOLATED
Maximum collector current (IC)400 A
Collector-emitter maximum voltage1700 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X5
Number of components1
Number of terminals5
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)1050 ns
Nominal on time (ton)450 ns
DIM400BSS17-E000
DIM400BSS17-E000
Single Switch IGBT Module
Replaces December 2003 version, issue PDS5670-2.1
PDS5670-3.1 February 2004
FEATURES
I
I
I
I
Trench Gate Field Stop Technology
Low Conduction Losses
Low Switching Losses
10µs Short Circuit Withstand
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1700V
2.0V
400A
800A
APPLICATIONS
I
I
I
Motor Drives
Wind Turbines
UPS Systems
2(E)
5(E
1
)
3(G
1
)
4(C
1
)
1(C)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM400BSS17-E000 is a single switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM400BSS17-E000
Note: When ordering, please use the complete part number.
Outline type code:
B
(See package details for further information)
Fig. 2 Module Outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/9
www.dynexsemi.com
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