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DK1014FZ

Description
SILICON CONTROLLED RECTIFIER,1.4KV V(DRM),100A I(T),TO-209AC
CategoryAnalog mixed-signal IC    Trigger device   
File Size209KB,2 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

DK1014FZ Overview

SILICON CONTROLLED RECTIFIER,1.4KV V(DRM),100A I(T),TO-209AC

DK1014FZ Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Reach Compliance Codecompliant
ECCN codeEAR99
Nominal circuit commutation break time30 µs
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage3 V
Maximum leakage current15 mA
On-state non-repetitive peak current1200 A
Maximum on-state current100000 A
Maximum operating temperature125 °C
Minimum operating temperature-45 °C
Off-state repetitive peak voltage1400 V
surface mountNO
Trigger device typeSCR
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