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CEIF630B

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size82KB,4 Pages
ManufacturerChino-Excel
Download Datasheet Parametric Compare View All

CEIF630B Overview

Transistor

CEIF630B Parametric

Parameter NameAttribute value
MakerChino-Excel
package instruction,
Reach Compliance Codeunknown
CEPF630B/CEBF630B
CEIF630B/CEFF630B
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEPF630B
CEBF630B
CEIF630B
CEFF630B
V
DSS
200V
200V
200V
200V
R
DS(ON)
0.4Ω
0.4Ω
0.4Ω
0.4Ω
I
D
9A
9A
9A
9A
e
@V
GS
10V
10V
10V
10V
D
PRELIMINARY
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
d
Single Pulsed Avalanche Current
d
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263/262
V
DS
V
GS
I
D
I
DM
f
P
D
E
AS
I
AS
T
J
,T
stg
9
36
74
0.59
150
9
200
TO-220F
Units
V
V
±
30
9
e
A
A
W
W/ C
mJ
A
C
36
e
35
0.28
150
9
-55 to 150
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
1.7
62.5
Limit
3.6
65
Units
C/W
C/W
2004.November
4 - 194
http://www.cetsemi.com

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CEIF630B CEFF630B CEPF630B CEBF630B
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Maker Chino-Excel Chino-Excel Chino-Excel Chino-Excel
Reach Compliance Code unknown unknown unknown unknown
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