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CEM3060

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size101KB,4 Pages
ManufacturerChino-Excel
Download Datasheet Parametric View All

CEM3060 Overview

Transistor

CEM3060 Parametric

Parameter NameAttribute value
MakerChino-Excel
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)14 A
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.0078 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)185 pF
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment2.5 W
Maximum power dissipation(Abs)2.5 W
Maximum pulsed drain current (IDM)50 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)120 ns
Maximum opening time (tons)45 ns
CEM3060
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 14A, R
DS(ON)
= 7.8mΩ @V
GS
= 10V.
R
DS(ON)
= 11.5mΩ @V
GS
= 4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D
8
D
7
D
6
D
5
PRELIMINARY
SO-8
1
1
S
2
S
3
S
4
G
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
30
Units
V
V
A
A
W
C
±
20
14
50
2.5
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
50
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.April
http://www.cetsemi.com
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