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BFG591

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size61KB,1 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric View All

BFG591 Overview

Transistor,

BFG591 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.2 A
ConfigurationSingle
Minimum DC current gain (hFE)60
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.2 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
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