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BFG67T/R

Description
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size105KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BFG67T/R Overview

TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal

BFG67T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC PACKAGE-4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
highest frequency bandL BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components1
Number of terminals4
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power consumption environment0.3 W
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
GuidelineCECC
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)8000 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Product specification
Supersedes data of September 1995
1998 Oct 02

BFG67T/R Related Products

BFG67T/R BFG67/XT/R
Description TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-61B, 4 PIN, BIP RF Small Signal
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction PLASTIC PACKAGE-4 PLASTIC, SC-61B, 4 PIN
Contacts 4 4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.05 A 0.05 A
Collector-emitter maximum voltage 10 V 10 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 60 60
highest frequency band L BAND L BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 4 4
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power consumption environment 0.3 W 0.3 W
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
Guideline CECC CECC
surface mount YES YES
Terminal surface Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 8000 MHz 8000 MHz
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