BFQ67
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise small signal amplifiers up to 2 GHz. This tran-
sistor has superior noise figure and associated gain
performance at UHF, VHF, and microwave frequencies.
Features
D
Small feedback capacitance
D
Low noise figure
D
High transition frequency
1
13 581
94 9280
2
3
Marking: V2
Plastic case (SOT 23)
1 = Collector; 2 = Base; 3 = Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
60°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
10
2.5
50
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Parameters
Junction ambient on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Maximum
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 24-Mar-97
1 (10)
BFQ67
Electrical DC Characteristics
T
amb
= 25°C
Parameters / Test Conditions
Collector-emitter cut-off current
V
CE
= 20 V, V
BE
= 0
Collector-base cut-off current
V
CB
= 15 V, I
E
= 0
Emitter-base cut-off current
V
EB
= 1 V, I
C
= 0
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
I
C
= 50 mA, I
B
= 5 mA
DC forward current transfer ratio
V
CE
= 5 V, I
C
= 15 mA
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
65
10
0.1
100
0.4
150
Min.
Typ.
Max.
100
100
1
Unit
m
A
nA
m
A
V
V
Electrical AC Characteristics
T
amb
= 25°C
Parameters / Test Conditions
Transition frequency
V
CE
= 8 V, I
C
= 15 mA, f = 500 MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
Collector-emitter capacitance
V
CE
= 8 V, f = 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
Noise figure
V
CE
= 8 V, Z
S
= 50
W
, f = 2 GHz
I
C
= 5 mA
I
C
= 15 mA
V
CE
= 8 V, Z
S
= Z
Sopt
, f = 800 MHz
I
C
= 5 mA
I
C
= 15 mA
Power gain
V
CE
= 8 V, Z
S
= 50
W
, Z
L
= Z
Lopt
, I
C
= 15 mA
f = 2 GHz
f = 800 MHz
Linear output voltage – two tone intermodulation test
V
CE
= 8 V, I
C
= 15 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz, Z
S
= Z
L
= 50
W
Third order intercept point
V
CE
= 8 V, I
C
= 15 mA, f = 800 MHz
Symbol
f
T
C
cb
C
ce
C
eb
Min.
Typ.
7.5
0.4
0.2
0.85
Max.
Unit
GHz
pF
pF
pF
F
F
F
F
2.5
3.0
0.8
1.5
dB
dB
dB
dB
G
pe
G
pe
8
15.5
dB
dB
V
1
= V
2
IP
3
160
26
mV
dBm
2 (10)
TELEFUNKEN Semiconductors
Rev. A2, 24-Mar-97
BFQ67
Common Emitter S-Parameters
Z
0
= 50
W
S
11
V
CE
/V
I
C
/mA
f/MHz
LIN
MAG
0.894
0.749
0.610
0.486
0.445
0.419
0.402
0.403
0.411
0.423
0.445
0.464
0.490
0.760
0.522
0.390
0.311
0.292
0.282
0.287
0.298
0.313
0.328
0.353
0.379
0.400
0.594
0.346
0.264
0.230
0.224
0.225
0.235
0.251
0.270
0.287
0.310
0.342
0.362
ANG
deg
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
–20.6
–56.2
–83.8
–116.2
–132.4
–147.3
–166.6
177.0
167.0
158.5
146.1
137.1
130.5
–32.1
–79.0
–108.5
–139.1
–153.5
–166.5
178.0
164.0
157.1
149.6
140.6
133.2
127.4
–46.3
–101.6
–130.9
–158.2
–169.5
179.8
166.8
156.9
150.2
144.1
136.4
131.0
125.6
6.78
5.61
4.50
3.36
2.87
2.50
2.12
1.83
1.69
1.59
1.45
1.34
1.27
14.10
9.62
6.72
4.56
3.77
3.21
2.67
2.29
2.10
1.96
1.79
1.65
1.55
22.01
12.12
7.86
5.13
4.21
3.56
2.94
2.51
2.30
2.14
1.95
1.79
1.68
LIN
MAG
S
21
ANG
deg
163.0
136.2
117.7
98.8
90.2
81.9
71.7
62.8
58.0
53.0
45.8
39.1
34.7
154.1
121.5
104.7
89.9
83.1
76.7
68.3
60.9
56.6
52.5
46.4
39.4
35.4
144.4
110.8
97.1
85.1
79.5
73.9
66.8
59.9
56.0
52.1
46.2
39.9
35.9
0.027
0.066
0.086
0.102
0.109
0.115
0.126
0.142
0.156
0.173
0.202
0.232
0.255
0.024
0.052
0.067
0.088
0.103
0.119
0.143
0.169
0.189
0.209
0.239
0.267
0.286
0.021
0.043
0.060
0.088
0.107
0.126
0.154
0.184
0.206
0.226
0.256
0.284
0.302
LIN
MAG
S
12
ANG
deg
77.1
59.2
50.0
46.3
46.9
48.7
53.1
58.1
60.8
63.2
65.2
65.5
64.7
72.7
58.5
57.0
60.0
62.1
63.6
64.7
65.5
65.2
64.8
63.5
61.5
59.8
69.8
63.5
66.0
69.0
69.7
69.6
68.6
67.6
66.2
65.1
62.6
60.1
57.8
0.967
0.834
0.716
0.623
0.590
0.568
0.546
0.531
0.524
0.516
0.511
0.490
0.471
0.912
0.663
0.538
0.473
0.459
0.450
0.438
0.428
0.423
0.415
0.406
0.380
0.358
0.829
0.524
0.431
0.399
0.396
0.393
0.387
0.379
0.374
0.366
0.354
0.325
0.301
LIN
MAG
S
22
ANG
deg
–8.7
–20.8
–25.9
–28.6
–30.1
–31.8
–35.0
–38.8
–41.9
–45.1
–51.7
–59.1
–64.8
–15.2
–27.9
–28.1
–26.3
–26.4
–27.4
–30.4
–34.2
–37.1
–40.2
–46.8
–53.8
–58.9
–21.7
–29.9
–25.7
–21.9
–21.8
–23.3
–26.6
–30.7
–33.7
–36.9
–43.6
–50.5
–55.3
2
5
5
10
TELEFUNKEN Semiconductors
Rev. A2, 24-Mar-97
3 (10)
BFQ67
Common Emitter S-Parameters
Z
0
= 50
W
S
11
V
CE
/V
I
C
/mA
f/MHz
LIN
MAG
0.477
0.276
0.221
0.208
0.206
0.208
0.221
0.237
0.257
0.280
0.303
0.329
0.357
0.397
0.240
0.205
0.199
0.195
0.202
0.219
0.235
0.252
0.274
0.300
0.326
0.357
0.301
0.219
0.201
0.198
0.201
0.204
0.222
0.242
0.263
0.279
0.308
0.336
0.365
ANG
deg
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
–56.7
–116.4
–144.4
–169.5
–177.8
172.5
162.5
154.0
147.5
142.4
135.4
130.0
124.8
–66.0
–128.2
–153.8
–175.5
176.6
168.2
159.0
151.5
145.7
140.0
134.2
129.2
124.8
–82.0
–143.6
–165.8
176.3
170.4
163.8
156.2
149.4
144.6
139.7
133.6
128.8
124.1
26.58
13.06
8.25
5.34
4.35
3.68
3.03
2.58
2.37
2.21
2.01
1.85
1.73
29.45
13.50
8.43
5.43
4.42
3.73
3.08
2.62
2.40
2.24
2.03
1.87
1.76
32.38
13.79
8.52
5.46
4.43
3.75
3.09
2.62
2.40
2.24
2.03
1.86
1.75
LIN
MAG
S
21
ANG
deg
138.3
106.1
94.0
83.2
78.0
72.8
65.9
59.3
55.7
52.1
46.1
39.7
36.0
134.1
103.4
92.3
82.0
77.1
72.0
65.5
59.0
55.2
51.6
46.0
39.6
35.8
128.8
100.3
90.3
80.6
75.9
71.1
64.5
58.1
54.4
50.9
45.0
39.2
35.0
0.019
0.039
0.059
0.088
0.109
0.129
0.159
0.190
0.212
0.232
0.262
0.290
0.308
0.017
0.038
0.058
0.089
0.110
0.131
0.162
0.193
0.215
0.235
0.265
0.293
0.311
0.016
0.036
0.057
0.090
0.111
0.133
0.164
0.195
0.216
0.238
0.267
0.295
0.313
LIN
MAG
S
12
ANG
deg
69.7
67.8
70.9
72.5
72.3
71.6
69.9
68.2
66.7
65.2
62.4
59.5
57.1
69.8
71.1
73.5
74.3
73.8
72.5
70.5
68.6
66.8
65.3
62.4
59.4
57.0
71.9
74.7
76.5
76.1
75.2
73.5
71.3
69.2
67.3
65.6
62.4
59.4
56.8
0.7681
0.4623
0.3912
0.3733
0.3734
0.3736
0.3686
0.3619
0.3561
0.3474
0.3343
0.3053
0.2807
0.722
0.427
0.370
0.360
0.362
0.363
0.359
0.352
0.346
0.338
0.325
0.295
0.270
0.662
0.393
0.352
0.350
0.354
0.356
0.353
0.346
0.340
0.332
0.318
0.288
0.264
LIN
MAG
S
22
ANG
deg
–25.3
–29.2
–23.1
–19.1
–19.4
–21.1
–24.7
–29.0
–32.1
–35.4
–42.2
–49.1
–53.7
–27.5
–28.1
–21.0
–17.3
–17.7
–19.7
–23.6
–28.0
–31.1
–34.5
–41.1
–48.3
–52.9
–29.4
–25.7
–18.3
–15.2
–16.0
–18.2
–22.3
–26.9
–30.2
–33.6
–40.7
–47.6
–52.1
15
5
20
30
4 (10)
TELEFUNKEN Semiconductors
Rev. A2, 24-Mar-97
BFQ67
Common Emitter S-Parameters
Z
0
= 50
W
S
11
V
CE
/V
I
C
/mA
f/MHz
LIN
MAG
0.900
0.751
0.615
0.480
0.440
0.408
0.391
0.390
0.398
0.407
0.429
0.454
0.474
0.777
0.532
0.391
0.306
0.283
0.268
0.271
0.281
0.298
0.312
0.339
0.369
0.388
0.618
0.356
0.262
0.218
0.211
0.205
0.219
0.235
0.249
0.268
0.294
0.322
0.352
ANG
deg
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
–19.9
–54.9
–82.0
–113.9
–130.1
–145.1
–164.8
178.5
168.6
159.6
147.7
138.6
131.5
–30.5
–76.2
–104.5
–135.8
–149.1
–163.0
–180.0
166.6
158.8
151.8
142.4
134.7
128.9
–43.7
–96.4
–125.0
–153.5
–164.9
–175.7
170.4
158.9
152.1
145.5
138.8
132.3
126.8
6.84
5.70
4.59
3.43
2.94
2.55
2.16
1.87
1.73
1.62
1.48
1.37
1.29
14.06
9.71
6.82
4.64
3.84
3.27
2.72
2.33
2.14
2.00
1.82
1.68
1.57
21.93
12.30
8.01
5.24
4.28
3.63
3.00
2.56
2.34
2.19
1.99
1.83
1.72
LIN
MAG
S
21
ANG
deg
163.2
136.6
118.3
99.5
90.8
82.7
72.4
63.5
58.4
54.0
46.7
39.9
35.2
154.7
122.4
105.5
90.5
83.7
77.3
69.1
61.5
57.3
53.2
46.8
40.1
35.8
145.3
111.7
97.8
85.6
80.1
74.6
67.4
60.5
56.8
52.8
46.9
40.4
36.3
0.026
0.063
0.083
0.098
0.105
0.112
0.123
0.138
0.153
0.169
0.198
0.226
0.249
0.023
0.050
0.065
0.086
0.101
0.116
0.139
0.165
0.184
0.204
0.232
0.260
0.278
0.020
0.042
0.059
0.086
0.104
0.123
0.150
0.180
0.200
0.221
0.250
0.276
0.294
LIN
MAG
S
12
ANG
deg
76.9
59.9
50.7
47.1
47.8
49.8
54.2
59.0
61.7
64.2
65.9
66.3
65.3
73.1
58.9
57.3
60.4
62.3
63.8
65.1
65.9
65.6
65.3
64.1
62.2
60.2
70.6
63.6
66.0
68.9
69.7
69.6
68.8
67.8
66.6
65.4
63.1
60.4
58.0
0.967
0.838
0.724
0.632
0.601
0.579
0.556
0.544
0.536
0.529
0.523
0.502
0.482
0.916
0.675
0.552
0.489
0.473
0.466
0.454
0.445
0.440
0.432
0.424
0.397
0.373
0.837
0.542
0.448
0.417
0.413
0.411
0.404
0.398
0.392
0.384
0.373
0.343
0.316
LIN
MAG
S
22
ANG
deg
–8.4
–20.1
–25.0
–27.6
–29.0
–30.8
–33.8
–37.6
–40.4
–43.5
–49.7
–56.8
–62.1
–14.5
–26.7
–27.2
–25.3
–25.5
–26.5
–29.4
–33.0
–35.7
–38.8
–45.0
–51.6
–56.0
–20.6
–28.7
–24.9
–21.1
–21.1
–22.5
–25.9
–29.7
–32.5
–35.6
–42.0
–48.4
–52.2
2
8
5
10
TELEFUNKEN Semiconductors
Rev. A2, 24-Mar-97
5 (10)
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