BFR520
NPN 9 GHz wideband transistor
Rev. 03 — 1 September 2004
Product data sheet
1. Product profile
1.1 General description
The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.
1.2 Features
s
s
s
s
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
1.3 Applications
s
RF front end wideband applications in the GHz range
x
Analog and digital cellular telephones
x
Cordless telephones (CT1, CT2, DECT, etc.)
x
Radar detectors
x
Pagers and satellite TV tuners (SATV)
x
Repeater amplifiers in fiber-optic systems.
1.4 Quick reference data
Table 1:
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
Quick reference data
Conditions
R
BE
= 0
Ω
Min
-
-
-
up to T
sp
= 97
°C
I
C
= 20 mA; V
CE
= 6 V
I
C
= i
c
= 0 A; V
CB
= 6 V;
f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V;
f = 1 GHz
I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
°C
f = 900 MHz
f = 2 GHz
-
-
15
9
-
-
dB
dB
[1]
Symbol Parameter
collector-base voltage
collector-emitter
voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
Typ
-
-
-
-
120
0.4
9
Max
20
15
70
300
250
-
-
Unit
V
V
mA
mW
pF
GHz
-
60
-
-
Philips Semiconductors
BFR520
NPN 9 GHz wideband transistor
Quick reference data
…continued
Conditions
I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; T
amb
= 25
°C
I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz
I
C
= 20 mA; V
CE
= 6 V;
f = 900 MHz
I
C
= 5 mA; V
CE
= 8 V;
f = 2 GHz
-
-
-
1.1
1.6
1.9
1.6
2.1
-
dB
dB
dB
Min
13
Typ
14
Max
-
Unit
dB
insertion power gain
Table 1:
s
21
2
Symbol Parameter
NF
noise figure
[1]
T
sp
is the temperature at the soldering point of the collector tab.
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
base
emitter
collector
3
1
2
1
2
SOT23
sym021
Simplified outline
Symbol
3
3. Ordering information
Table 3:
Ordering information
Package
Name
BFR520
-
Description
plastic surface mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4:
BFR520
[1]
* = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
Marking
Marking code
[1]
32*
Type number
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
2 of 13
Philips Semiconductors
BFR520
NPN 9 GHz wideband transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
R
BE
= 0
Ω
open collector
up to T
sp
= 97
°C
[1]
Min
-
-
-
-
-
−65
-
Max
20
15
2.5
70
300
150
175
Unit
V
V
V
mA
mW
°C
°C
T
sp
is the temperature at the soldering point of the collector tab.
6. Thermal characteristics
Table 6:
R
th(j-s)
[1]
Thermal characteristics
Conditions
[1]
Symbol Parameter
thermal resistance from junction to soldering point
Typ
260
Unit
K/W
T
sp
is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 7:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
Conditions
Min
-
60
-
-
-
-
[1]
Typ
-
120
1
0.5
0.4
9
Max
50
250
-
-
-
-
Unit
nA
collector cut-off I
E
= 0 A; V
CB
= 6 V
current
DC current gain I
C
= 20 mA; V
CE
= 6 V
emitter
capacitance
collector
capacitance
feedback
capacitance
transition
frequency
I
C
= i
c
= 0 A; V
EB
= 0.5 V;
f = 1 MHz
I
E
= i
e
= 0 A; V
CB
= 6 V;
f = 1 MHz
I
C
= 0 A; V
CB
= 6 V;
f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V;
f = 1 GHz
pF
pF
pF
GHz
maximum
I
C
= 20 mA; V
CE
= 6 V;
unilateral power T
amb
= 25
°C
gain
f = 900 MHz
f = 2 GHz
insertion power I
C
= 20 mA; V
CE
= 6 V;
gain
T
amb
= 25
°C;
f = 900 MHz
-
-
13
15
9
14
-
-
-
dB
dB
dB
s
21
2
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
3 of 13
Philips Semiconductors
BFR520
NPN 9 GHz wideband transistor
Table 7:
Characteristics
…continued
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
NF
noise figure
Conditions
Γ
s
=
Γ
opt
; V
CE
= 6 V;
T
amb
= 25
°C
I
C
= 5 mA; f = 900 MHz
I
C
= 20 mA; f = 900 MHz
I
C
= 5 mA; f = 2 GHz
P
L(1dB)
output power at I
C
= 20 mA; V
CE
= 6 V;
1 dB gain
R
L
= 50
Ω;
T
amb
= 25
°C;
compression
f = 900 MHz
third order
intercept point
[2]
Min
Typ
Max
Unit
-
-
-
-
1.1
1.6
1.9
17
1.6
2.1
-
-
dB
dB
dB
dBm
ITO
-
26
-
dBm
[1]
G
UM
is the maximum unilateral power gain, assuming s
12
is zero and
G
UM
[2]
s
21
=
10 log
-----------------------------------------------------
dB.
2
2
(
1
–
s
11
) (
1
–
s
22
)
2
I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
Ω;
T
amb
= 25
°C;
f
p
= 900 MHz; f
q
= 902 MHz
Measured at f
(2p−q)
= 898 MHz and f
(2q−p)
= 904 MHz.
400
P
tot
(mW)
300
mra702
250
h
FE
200
mra703
150
200
100
100
50
0
0
50
100
150
T
sp
(°C)
200
0
10
−2
10
−1
1
10
I
C
(mA)
10
2
V
CE
= 6 V.
Fig 1. Power derating curve.
Fig 2. DC current gain as a function of collector
current.
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
4 of 13
Philips Semiconductors
BFR520
NPN 9 GHz wideband transistor
0.6
C
re
(pF)
0.4
mra704
12
f
T
(GHz)
8
mra705
V
CE
= 6 V
3V
0.2
4
0
0
4
8
V
CB
(V)
12
0
10
−1
1
10
I
C
(mA)
10
2
I
C
= 0 A; f = 1 MHz.
T
amb
= 25
°C;
f = 1 GHz.
Fig 3. Feedback capacitance as a function of
collector-base voltage.
mra706
Fig 4. Transition frequency as a function of collector
current.
mra707
25
gain
(dB)
20
MSG
15
G
UM
25
gain
(dB)
20
G
max
15
10
10
Gmax
GUM
5
5
0
0
0
10
20
I
C
(mA)
30
0
10
20
I
C
(mA)
30
V
CE
= 6 V; f = 900 MHz.
V
CE
= 6 V; f = 2 GHz.
Fig 5. Gain as a function of collector current;
f = 900 MHz.
Fig 6. Gain as a function of collector current;
f = 2 GHz.
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
5 of 13
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