BFR520TRL datasheet, PDF - EEWORLD Datasheet

BFR520TRL: DescriptionL BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size300KB，9 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BFR520TRL Overview

L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE, HIGH RELIABILITY
Maximum collector current (IC)	0.07 A
Configuration	SINGLE
highest frequency band	L BAND
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Minimum power gain (Gp)	9 dB
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	9000 MHz

	BFR520TRL	BFR520TRL13
Description	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW NOISE, HIGH RELIABILITY	LOW NOISE, HIGH RELIABILITY
Maximum collector current (IC)	0.07 A	0.07 A
Configuration	SINGLE	SINGLE
highest frequency band	L BAND	L BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Minimum power gain (Gp)	9 dB	9 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	TIN	TIN
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	9000 MHz	9000 MHz

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