BFU725F
NPN wideband silicon germanium RF transistor
Rev. 02 — 23 June 2010
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A
or
equivalent standards.
1.2 Features
Low noise high gain microwave transistor
Noise figure (NF) = 0.7 dB at 5.8 GHz
High maximum stable gain 27 dB at 1.8 GHz
110 GHz f
T
silicon germanium technology
1.3 Applications
2nd LNA stage and mixer stage in DBS LNB’s
Satellite radio
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ka band oscillators DRO’s
NXP Semiconductors
BFU725F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1.
V
CBO
V
CEO
V
EBO
I
C
P
tot
h
FE
C
CBS
f
T
G
p(max)
NF
[1]
[2]
Quick reference data
Conditions
open emitter
open base
open collector
T
sp
≤
90
°C
I
C
= 10 mA; V
CE
= 2 V;
T
j
= 25
°C
V
CB
= 2 V; f = 1 MHz
I
C
= 25 mA; V
CE
= 2 V;
f = 2 GHz; T
amb
= 25
°C
I
C
= 25 mA; V
CE
= 2 V;
f = 5.8 GHz; T
amb
= 25
°C
I
C
= 5 mA; V
CE
= 2 V;
f = 5.8 GHz;
Γ
S
=
Γ
opt
[2]
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
maximum power gain
noise figure
Min
-
-
-
-
-
300
-
-
-
-
Typ
-
-
-
25
-
430
70
70
18
0.7
Max
10
2.8
0.55
40
136
640
-
-
-
-
Unit
V
V
V
mA
mW
fF
GHz
dB
dB
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
1, 3
2
1
mbb159
Simplified outline
3
4
Symbol
4
2
3. Ordering information
Table 3.
Ordering information
Package
Name
BFU725F
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
Type number
BFU725F
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 23 June 2010
2 of 13
NXP Semiconductors
BFU725F
NPN wideband silicon germanium RF transistor
4. Marking
Table 4.
BFU725F
Marking
Marking
B6*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
≤
90
°C
[1]
Min
-
-
-
-
-
−65
-
Max
10
2.8
0.55
40
136
+150
150
Unit
V
V
V
mA
mW
°C
°C
T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
440
Unit
K/W
200
P
tot
(mW)
150
001aah424
100
50
0
0
40
80
120
T
sp
(°C)
160
Fig 1. Power derating curve
BFU725F
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 23 June 2010
3 of 13
NXP Semiconductors
BFU725F
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Conditions
I
C
= 2.5
μA;
I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
I
E
= 0 mA; V
CB
= 4.5 V
I
C
= 10 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°C
I
C
= 25 mA; V
CE
= 2 V; T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
|s
21
|
2
insertion power gain
I
C
= 25 mA; V
CE
= 2 V; T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
NF
noise figure
I
C
= 5 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
;
T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
G
ass
associated gain
I
C
= 5 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
;
T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
-
-
-
-
-
24
22
20
13.5
10
-
-
-
-
-
dB
dB
dB
dB
dB
-
-
-
-
-
0.42
0.43
0.47
0.7
1.1
-
-
-
-
-
dB
dB
dB
dB
dB
-
-
-
-
-
26.7
25.4
23
16
9.3
-
-
-
-
-
dB
dB
dB
dB
dB
[1]
Min
10
2.8
-
-
300
-
-
-
-
Typ
-
-
25
-
430
268
342
70
70
Max
-
-
40
100
640
-
-
-
-
Unit
V
V
mA
nA
fF
fF
fF
GHz
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage
I
C
I
CBO
h
FE
C
CES
C
EBS
C
CBS
f
T
G
p(max)
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
-
-
-
-
-
28
27
25.5
18
13
-
-
-
-
-
dB
dB
dB
dB
dB
BFU725F
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 23 June 2010
4 of 13
NXP Semiconductors
BFU725F
NPN wideband silicon germanium RF transistor
Table 7.
Characteristics
…continued
T
j
= 25
°
C unless otherwise specified
Symbol
P
L(1dB)
Parameter
output power at 1 dB gain compression
Conditions
I
C
= 25 mA; V
CE
= 2 V; Z
S
= Z
L
= 50
Ω;
T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
IP3
third-order intercept point
I
C
= 25 mA; V
CE
= 2 V; Z
S
= Z
L
= 50
Ω;
T
amb
= 25
°C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
[1]
G
p(max)
is the maximum power gain, if K
>
1. If K
<
1 then G
p(max)
= MSG.
Min
Typ
Max
Unit
-
-
-
-
8.5
9
8.5
8
-
-
-
-
dBm
dBm
dBm
dBm
-
-
-
-
17
17
17
19
-
-
-
-
dBm
dBm
dBm
dBm
BFU725F
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 23 June 2010
5 of 13
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