DISCRETE SEMICONDUCTORS
BFG425W
NPN 25 GHz wideband transistor
Product specification
Supersedes data of 1997 Oct 28
File under Discrete Semiconductors, SC14
1998 Mar 11
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
FEATURES
•
Very high power gain
•
Low noise figure
•
High transition frequency
•
Emitter is thermal lead
•
Low feedback capacitance.
APPLICATIONS
•
RF front end
•
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
•
Radar detectors
•
Pagers
•
Satellite television tuners (SATV)
•
High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
max
F
PARAMETER
collector-base voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise figure
T
s
≤
103
°C
I
C
= 25 mA; V
CE
= 2 V; T
j
= 25
°C
I
C
= 0; V
CB
= 2 V; f = 1 MHz
open emitter
collector-emitter voltage open base
CONDITIONS
MIN.
−
−
−
−
50
−
2
Top view
1
MSB842
BFG425W
PINNING
PIN
1
2
3
4
emitter
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
4
Marking code:
P5.
Fig.1 Simplified outline SOT343R.
TYP.
−
−
25
−
80
95
25
20
1.2
MAX.
10
4.5
30
135
120
−
−
−
−
UNIT
V
V
mA
mW
fF
GHz
dB
dB
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°C −
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°C −
I
C
= 2 mA; V
CE
= 2 V; f = 2 GHz;
Γ
S
=
Γ
opt
CAUTION
−
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11
2
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
350
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
T
s
≤
103
°C;
note 1; see Fig.2
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
BFG425W
MAX.
10
4.5
1
30
135
+150
150
V
V
V
UNIT
mA
mW
°C
°C
UNIT
K/W
handbook, halfpage
200
MGG681
Ptot
(mW)
150
100
50
0
0
40
80
120
Ts (°C)
160
Fig.2 Power derating curve.
1998 Mar 11
3
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
max
S
21
F
2
BFG425W
PARAMETER
collector-base breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum power gain; note 1
insertion power gain
noise figure
CONDITIONS
I
C
= 2.5
µA;
I
E
= 0
I
E
= 2.5
µA;
I
C
= 0
I
E
= 0; V
CB
= 4.5 V
I
C
= 25 mA; V
CE
= 2 V; see Fig.3
I
E
= i
e
= 0; V
CB
= 2 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 2 V; f = 1 MHz;
see Fig.4
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°C;
see Fig.5
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°C;
see Figs 7 and 8
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°C;
see Fig.8
I
C
= 2 mA; V
CE
= 2 V; f = 900 MHz;
Γ
S
=
Γ
opt
; see Fig.13
I
C
= 2 mA; V
CE
= 2 V; f = 2 GHz;
Γ
S
=
Γ
opt
; see Fig.13
MIN.
10
4.5
1
−
50
−
−
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
80
300
575
95
25
20
17
0.8
1.2
12
22
MAX.
−
−
−
15
120
−
−
−
−
−
−
−
−
−
−
UNIT
V
V
V
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dBm
dBm
collector-emitter breakdown voltage I
C
= 1 mA; I
B
= 0
P
L1
ITO
Notes
output power at 1 dB gain
compression
third order intercept point
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
1. G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG; see Figs 6, 7 and 8.
2. Z
S
is optimized for noise; Z
L
is optimized for gain.
1998 Mar 11
4
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
MGG682
handbook, halfpage
120
handbook, halfpage
200
MGG683
Cre
(fF)
hFE
(1)
(2)
(3)
160
80
120
80
40
40
0
0
(1) V
CE
= 3 V.
(2) V
CE
= 2 V.
(3) V
CE
= 1 V.
10
20
30
IC (mA)
40
0
0
1
2
3
4
5
VCB (V)
I
C
= 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
25
MGG684
fT
(GHz)
handbook, halfpage
30
MGG685
20
MSG
(dB)
20
15
10
10
5
0
1
10
IC (mA)
10
2
0
0
10
20
30
IC (mA)
40
V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°C.
V
CE
= 2 V; f = 900 MHz.
Fig.5
Transition frequency as a function of
collector current; typical values.
Fig.6
Maximum stable gain as a function of
collector current; typical values.
1998 Mar 11
5
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