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BFG135AE6327

Description
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size158KB,6 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BFG135AE6327 Overview

RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN

BFG135AE6327 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.15 A
Collector-based maximum capacity1.8 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)6000 MHz
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